Publications
2014
- Published
Structural investigation of ion implantation of boron on random pyramid textured Si(100) for photovoltaic applications
Krugener, J., Bugiel, E., Osten, H., Peibst, R., Kiefer, F., Ohrdes, T. & Brendel, R., 29 Oct 2014, Proceedings of the International Conference on Ion Implantation Technology. Rao, M. V. (ed.). Institute of Electrical and Electronics Engineers Inc., 6940060. (Proceedings of the International Conference on Ion Implantation Technology).Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
- Published
Building blocks for back-junction back-contacted cells and modules with ion-implanted poly-Si junctions
Peibst, R., Romer, U., Larionova, Y., Schulte-Huxel, H., Ohrdes, T., Haberle, M., Lim, B., Krugener, J., Stichtenoth, D., Wutherich, T., Schollhorn, C., Graff, J. & Brendel, R., 15 Oct 2014, 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc., p. 852-856 5 p. 6925049Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
- Published
Emitter recombination current densities of boron emitters with silver/aluminum pastes
Kiefer, F., Peibst, R., Ohrdes, T., Krügener, J., Osten, H. J. & Brendel, R., 15 Oct 2014, 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc., p. 2808-2812 5 p. 6925514Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
- Published
Structural analysis of textured silicon surfaces after ion implantation under tilted angle
Krügener, J., Bugiel, E., Peibst, R., Kiefer, F., Ohrdes, T., Brendel, R. & Osten, H., 1 Sept 2014, In: Semiconductor Science and Technology. 29, 9, 095004.Research output: Contribution to journal › Article › Research › peer review
- Published
A simple model describing the symmetric I-V characteristics of p polycrystalline Si/n monocrystalline Si, and n polycrystalline Si/p monocrystalline Si junctions
Peibst, R., Römer, U., Hofmann, K. R., Lim, B., Wietler, T. F., Krügener, J., Harder, N. P. & Brendel, R., May 2014, In: IEEE journal of photovoltaics. 4, 3, p. 841-850 10 p., 6800058.Research output: Contribution to journal › Article › Research › peer review
2013
- Published
Morphology of mesa surfaces on Si(111) prepared by molecular beam epitaxy at temperatures around the (7 × 7)-"1 × 1" surface phase transition
Krügener, J., Osten, H. J. & Fissel, A., Dec 2013, In: Surface science. 618, p. 27-35 9 p.Research output: Contribution to journal › Article › Research › peer review
- Published
Weak light performance of PERC, PERT and standard industrial solar cells
Krügener, J. & Harder, N. P., 2013, In: Energy Procedia. 38, p. 108-113 6 p.Research output: Contribution to journal › Conference article › Research › peer review
2012
- Published
Preparation of large step-free mesas on Si(111) by molecular beam epitaxy
Fissel, A., Krügener, J. & Osten, H. J., Oct 2012, In: Physica Status Solidi (C) Current Topics in Solid State Physics. 9, 10-11, p. 2050-2053 4 p.Research output: Contribution to journal › Article › Research › peer review
2011
- Published
Towards controlled molecular beam epitaxial growth of artificially stacked Si: Study of boron adsorption and surface segregation on Si(1 1 1)
Fissel, A., Krügener, J. & Osten, H. J., 15 May 2011, In: Journal of crystal growth. 323, 1, p. 144-149 6 p.Research output: Contribution to journal › Article › Research › peer review
- Published
Ultraviolet photoelectron spectroscopic study of boron adsorption and surface segregation on Si(111)
Krügener, J., Osten, H. J. & Fissel, A., 3 May 2011, In: Physical Review B - Condensed Matter and Materials Physics. 83, 20, 205303.Research output: Contribution to journal › Article › Research › peer review
2010
- Published
Epitaxial growth and thermal stability of silicon layers on crystalline gadolinium oxide
Dargis, R., Fissel, A., Schwendt, D., Bugiel, E., Krügener, J., Wietler, T., Laha, A. & Osten, H. J., 21 Oct 2010, In: VACUUM. 85, 4, p. 523-526 4 p.Research output: Contribution to journal › Article › Research › peer review
- Published
Single-crystalline Si grown on single-crystalline Gd2O3 by modified solid-phase epitaxy
Fissel, A., Dargis, R., Bugiel, E., Schwendt, D., Wietler, T., Krügener, J., Laha, A. & Osten, H. J., 26 Feb 2010, In: THIN SOLID FILMS. 518, 9, p. 2546-2550 5 p.Research output: Contribution to journal › Article › Research › peer review
- Published
Role of boron and (√3×√3)-B surface defects on the growth mode of Si on Si(111): A photoemission and electron diffraction study
Fissel, A., Krügener, J., Schwendt, D. & Osten, H. J., Feb 2010, In: Physica Status Solidi (A) Applications and Materials Science. 207, 2, p. 245-253 9 p.Research output: Contribution to journal › Article › Research › peer review
2009
- Published
Influence of boron on the initial stages of Si molecular beam epitaxy on Si(1 1 1) studied by reflection high-energy electron diffraction
Fissel, A., Krügener, J. & Osten, H. J., 1 Feb 2009, In: Surface science. 603, 3, p. 477-481 5 p.Research output: Contribution to journal › Article › Research › peer review
2008
- Published
Molecular beam epitaxial growth of Si on heavily boron-doped Si(111) surface: From initial stages to the growth of Si polytypes
Fissel, A., Krügener, J., Bugiel, E., Block, T. & Osten, H. J., 2008, Proceedings of the 2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08. p. 148-151 4 p. 4802113. (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD).Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review