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Publications

  1. Published

    Epitaxial growth and thermal stability of silicon layers on crystalline gadolinium oxide

    Dargis, R., Fissel, A., Schwendt, D., Bugiel, E., Krügener, J., Wietler, T., Laha, A. & Osten, H. J., 21 Oct 2010, In: VACUUM. 85, 4, p. 523-526 4 p.

    Research output: Contribution to journalArticleResearchpeer review

  2. Published

    Towards controlled molecular beam epitaxial growth of artificially stacked Si: Study of boron adsorption and surface segregation on Si(1 1 1)

    Fissel, A., Krügener, J. & Osten, H. J., 15 May 2011, In: Journal of crystal growth. 323, 1, p. 144-149 6 p.

    Research output: Contribution to journalArticleResearchpeer review

  3. Published

    Single-crystalline Si grown on single-crystalline Gd2O3 by modified solid-phase epitaxy

    Fissel, A., Dargis, R., Bugiel, E., Schwendt, D., Wietler, T., Krügener, J., Laha, A. & Osten, H. J., 26 Feb 2010, In: THIN SOLID FILMS. 518, 9, p. 2546-2550 5 p.

    Research output: Contribution to journalArticleResearchpeer review

  4. Published

    Influence of (7×7)-"1×1" phase transition on step-free area formation in molecular beam epitaxial growth of Si on Si (111)

    Fissel, A., Roy Chaudhuri, A., Krügener, J. & Osten, H., 1 Sept 2019, In: Journal of crystal growth. 425, p. 154-157 4 p.

    Research output: Contribution to journalArticleResearchpeer review

  5. Published

    Impact of surface phase coexistence on the development of step-free areas on Si(111)

    Fissel, A., Chaudhuri, A. R., Krügener, J., Gribisch, P. & Osten, H. J., 26 Jun 2015, In: Frontiers of materials science. 9, 2, p. 141-146 6 p.

    Research output: Contribution to journalArticleResearchpeer review

  6. Published

    Preparation of large step-free mesas on Si(111) by molecular beam epitaxy

    Fissel, A., Krügener, J. & Osten, H. J., Oct 2012, In: Physica Status Solidi (C) Current Topics in Solid State Physics. 9, 10-11, p. 2050-2053 4 p.

    Research output: Contribution to journalArticleResearchpeer review

  7. Published

    Role of boron and (√3×√3)-B surface defects on the growth mode of Si on Si(111): A photoemission and electron diffraction study

    Fissel, A., Krügener, J., Schwendt, D. & Osten, H. J., Feb 2010, In: Physica Status Solidi (A) Applications and Materials Science. 207, 2, p. 245-253 9 p.

    Research output: Contribution to journalArticleResearchpeer review

  8. Published

    Molecular beam epitaxial growth of Si on heavily boron-doped Si(111) surface: From initial stages to the growth of Si polytypes

    Fissel, A., Krügener, J., Bugiel, E., Block, T. & Osten, H. J., 2008, Proceedings of the 2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08. p. 148-151 4 p. 4802113. (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD).

    Research output: Chapter in book/report/conference proceedingConference contributionResearchpeer review

  9. Published

    Influence of boron on the initial stages of Si molecular beam epitaxy on Si(1 1 1) studied by reflection high-energy electron diffraction

    Fissel, A., Krügener, J. & Osten, H. J., 1 Feb 2009, In: Surface science. 603, 3, p. 477-481 5 p.

    Research output: Contribution to journalArticleResearchpeer review

  10. Published

    Local Enhancement of Dopant Diffusion from Polycrystalline Silicon Passivating Contacts

    Flrat, M., Wouters, L., Lagrain, P., Haase, F., Polzin, J. I., Chaudhary, A., Nogay, G., Desrues, T., Krügener, J., Peibst, R., Tous, L., Sivaramakrishnan Radhakrishnan, H. & Poortmans, J., 20 Apr 2022, In: ACS Applied Materials and Interfaces. 14, 15, p. 17975-17986 12 p.

    Research output: Contribution to journalArticleResearchpeer review

  11. Published

    Epitaxial growth of Nd2O3 layers on virtual SiGe substrates on Si(111)

    Genath, H., Schubert, M. A., Yamtomo, H. L., Krügener, J. & Osten, H. J., 21 Mar 2024, In: Journal of applied physics. 135, 11, 13 p., 115302.

    Research output: Contribution to journalArticleResearchpeer review

  12. Published

    Transferring the Record p-type Si POLO-IBC Cell Technology Towards an Industrial Level

    Haase, F., Hollemann, C., Schafer, S., Krügener, J., Brendel, R. & Peibst, R., Jun 2019, 2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019: Proceedings. Institute of Electrical and Electronics Engineers Inc., p. 2200-2206 7 p. 8980960. (Conference Record of the IEEE Photovoltaic Specialists Conference).

    Research output: Chapter in book/report/conference proceedingConference contributionResearchpeer review

  13. Published

    Laser contact openings for local poly-Si-metal contacts enabling 26.1%-efficient POLO-IBC solar cells

    Haase, F., Hollemann, C., Schäfer, S., Merkle, A., Rienäcker, M., Krügener, J., Brendel, R. & Peibst, R., Nov 2018, In: Solar Energy Materials and Solar Cells. 186, p. 184-193 10 p.

    Research output: Contribution to journalArticleResearchpeer review

  14. Published

    Perimeter recombination in 25%-efficient IBC solar cells with passivating POLO contacts for both polarities

    Haase, F., Schäfer, S., Klamt, C., Kiefer, F., Krügener, J., Brendel, R. & Peibst, R., Jan 2018, In: IEEE journal of photovoltaics. 8, 1, p. 23-29 7 p.

    Research output: Contribution to journalArticleResearchpeer review

  15. Published

    Interdigitated back contact solar cells with polycrystalline silicon on oxide passivating contacts for both polarities

    Haase, F., Kiefer, F., Schafer, S., Kruse, C., Krügener, J., Brendel, R. & Peibst, R., Aug 2017, In: Japanese Journal of Applied Physics. 56, 8, 08MB15.

    Research output: Contribution to journalArticleResearchpeer review

  16. Published

    Fully screen‐printed silicon solar cells with local Al‐p+ and n‐type POLO interdigitated back contacts with a VOC of 716 mV and an efficiency of 23%

    Haase, F., Min, B., Hollemann, C., Krügener, J., Brendel, R. & Peibst, R., 15 Apr 2021, In: Progress in Photovoltaics: Research and Applications. 29, 5, p. 516-523 8 p.

    Research output: Contribution to journalArticleResearchpeer review

  17. Published

    Separating the two polarities of the POLO contacts of an 26.1%-efficient IBC solar cell

    Hollemann, C., Haase, F., Rienäcker, M., Barnscheidt, V., Krügener, J., Folchert, N., Brendel, R., Richter, S., Großer, S., Sauter, E., Hübner, J., Oestreich, M. & Peibst, R., 20 Jan 2020, In: Scientific Reports. 10, 1, 15 p., 658.

    Research output: Contribution to journalArticleResearchpeer review

  18. Published

    26.1%-efficient POLO-IBC cells: Quantification of electrical and optical loss mechanisms

    Hollemann, C., Haase, F., Schäfer, S., Krügener, J., Brendel, R. & Peibst, R., 1 Nov 2019, In: Progress in Photovoltaics: Research and Applications. 27, 11, p. 950-958 9 p.

    Research output: Contribution to journalArticleResearchpeer review

  19. Published

    Firing stability of n-type poly-Si on oxide junctions formed by quartz tube annealing

    Hollemann, C., Haase, F., Krugener, J., Brendel, R. & Peibst, R., 2020, 2020 47th IEEE Photovoltaic Specialists Conference, PVSC 2020. Institute of Electrical and Electronics Engineers Inc., p. 1274-1278 5 p. 9300849. (Conference Record of the IEEE Photovoltaic Specialists Conference; vol. 2020-June).

    Research output: Chapter in book/report/conference proceedingConference contributionResearchpeer review

  20. Published

    Firing stability of tube furnace-annealed n-type poly-Si on oxide junctions

    Hollemann, C., Rienäcker, M., Soeriyadi, A., Madumelu, C., Haase, F., Krügener, J., Hallam, B., Brendel, R. & Peibst, R., Jan 2022, In: Progress in Photovoltaics: Research and Applications. 30, 1, p. 49-64 16 p.

    Research output: Contribution to journalArticleResearchpeer review

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