Details
Original language | English |
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Title of host publication | Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B |
Pages | 1369-1370 |
Number of pages | 2 |
Publication status | Published - 1 Dec 2007 |
Event | 28th International Conference on the Physics of Semiconductors, ICPS 2006 - Vienna, Austria Duration: 24 Jul 2006 → 28 Jul 2006 |
Publication series
Name | AIP Conference Proceedings |
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Volume | 893 |
ISSN (Print) | 0094-243X |
ISSN (electronic) | 1551-7616 |
Abstract
The method of magnetotunneling spectroscopy has been used for experimental probing of heavy-hole impurity states in Si/Ge double-barrier heterostructures in magnetic field up to 18 Tesla. The impurities were located in a strained Ge quantum well with a thickness of four monolayers. We have observed a giant anisotropy of Zeeman splitting for these zero-dimensional systems. The splitting was measured as a function of angle between the external magnetic field and the quantum well plane. A complete suppression of the splitting takes place when the magnetic field is oriented parallel to the sample surface and quantum well plane, while in the perpendicular field the observed splitting is maximal.
Keywords
- Magnetic field, Quantum well, Spin-orbit effects
ASJC Scopus subject areas
- Physics and Astronomy(all)
- General Physics and Astronomy
Cite this
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Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B. 2007. p. 1369-1370 (AIP Conference Proceedings; Vol. 893).
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
}
TY - GEN
T1 - Zeeman splitting of zero-dimensional heavy-hole states in a strongly strained Ge quantum well
AU - Agafonov, O. B.
AU - Haendel, K. M.
AU - Winkler, R.
AU - Denker, U.
AU - Schmidt, O. G.
AU - Haug, R. J.
PY - 2007/12/1
Y1 - 2007/12/1
N2 - The method of magnetotunneling spectroscopy has been used for experimental probing of heavy-hole impurity states in Si/Ge double-barrier heterostructures in magnetic field up to 18 Tesla. The impurities were located in a strained Ge quantum well with a thickness of four monolayers. We have observed a giant anisotropy of Zeeman splitting for these zero-dimensional systems. The splitting was measured as a function of angle between the external magnetic field and the quantum well plane. A complete suppression of the splitting takes place when the magnetic field is oriented parallel to the sample surface and quantum well plane, while in the perpendicular field the observed splitting is maximal.
AB - The method of magnetotunneling spectroscopy has been used for experimental probing of heavy-hole impurity states in Si/Ge double-barrier heterostructures in magnetic field up to 18 Tesla. The impurities were located in a strained Ge quantum well with a thickness of four monolayers. We have observed a giant anisotropy of Zeeman splitting for these zero-dimensional systems. The splitting was measured as a function of angle between the external magnetic field and the quantum well plane. A complete suppression of the splitting takes place when the magnetic field is oriented parallel to the sample surface and quantum well plane, while in the perpendicular field the observed splitting is maximal.
KW - Magnetic field
KW - Quantum well
KW - Spin-orbit effects
UR - http://www.scopus.com/inward/record.url?scp=77958474307&partnerID=8YFLogxK
U2 - 10.1063/1.2730413
DO - 10.1063/1.2730413
M3 - Conference contribution
AN - SCOPUS:77958474307
SN - 9780735403970
T3 - AIP Conference Proceedings
SP - 1369
EP - 1370
BT - Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B
T2 - 28th International Conference on the Physics of Semiconductors, ICPS 2006
Y2 - 24 July 2006 through 28 July 2006
ER -