Details
| Original language | English |
|---|---|
| Title of host publication | SiliconPV 2018, the 8th International Conference on Crystalline Silicon Photovoltaics |
| Editors | Rolf Brendel, Jef Poortmans, Arthur Weeber, Giso Hahn, Christophe Ballif, Stefan Glunz, Pierre-Jean Ribeyron |
| Publication status | Published - 10 Aug 2018 |
| Event | SiliconPV 2018: The 8th International Conference on Crystalline Silicon Photovoltaics - Lausanne, Switzerland Duration: 19 Mar 2018 → 21 Mar 2018 |
Publication series
| Name | AIP Conference Proceedings |
|---|---|
| Volume | 1999 |
| ISSN (Print) | 0094-243X |
| ISSN (electronic) | 1551-7616 |
Abstract
We present a yield analysis of tandem devices consisting of GaInP top cells on Si or GaAs bottom cells with different terminal configurations. Inputs are the I-V and external quantum efficiency of the individual subcells and the irradiance-dependent module temperature of the bottom cell. Our model calculates the temperature of the tandem module by taking into account the performance, spectral working range and luminescent coupling of the different tandem devices, enabling an irradiance- and weather-dependent yield analysis for these modules. We apply the model to compare two types of two junction devices, a GaInP/GaAs monolithically grown tandem device, and a GaInP top cell stacked on a Si bottom cell, the present two best dual junction devices. When the subcells are series connected both technologies perform equally well. The performance of the GaInP/Si can be significantly improved relatively by 5.8% using 3-terminal (3T) devices with a back-contacted bottom cell instead of a 2T configuration, showing a possible benefit when using Si back contacted cells. For GaInP/Si, the 3T-device works as well as the 4T-device, enabling the integration of monolithic tandem cells into modules at comparably high efficiencies.
ASJC Scopus subject areas
- Physics and Astronomy(all)
- General Physics and Astronomy
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SiliconPV 2018, the 8th International Conference on Crystalline Silicon Photovoltaics. ed. / Rolf Brendel; Jef Poortmans; Arthur Weeber; Giso Hahn; Christophe Ballif; Stefan Glunz; Pierre-Jean Ribeyron. 2018. 120002 (AIP Conference Proceedings; Vol. 1999).
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
}
TY - GEN
T1 - Yield analysis and comparison of GaInP/Si and GaInP/GaAs multi-terminal tandem solar cells
AU - Schulte-Huxel, Henning
AU - Silverman, Timothy J.
AU - Friedman, Daniel J.
AU - Deceglie, Michael G.
AU - Rienäcker, Michael
AU - Schnabel, Manuel
AU - Warren, Emily L.
AU - Niepelt, Raphael
AU - Vogt, Malte R.
AU - Stradins, Pauls
AU - Peibst, Robby
AU - Tamboli, Adele C.
N1 - Funding Information: H. Schulte-Huxel acknowledges support for the Research Fellowship by Deutsche Forschungsgemeinschaft (DFG) (grant agreement No: SCHU 3206/1-1). Funding for this work at NREL was provided by DOE through EERE contract SETP DE-EE00030299 and under Contract No. DE-AC36-08GO28308. The U.S. Government retains and the publisher, by accepting the article for publication, acknowledges that the U.S. Government retains a nonexclusive, paid up, irrevocable, worldwide license to publish or reproduce the published form of this work, or allow others to do so, for U.S. Government purposes. Publisher Copyright: © 2018 Author(s). Copyright: Copyright 2018 Elsevier B.V., All rights reserved.
PY - 2018/8/10
Y1 - 2018/8/10
N2 - We present a yield analysis of tandem devices consisting of GaInP top cells on Si or GaAs bottom cells with different terminal configurations. Inputs are the I-V and external quantum efficiency of the individual subcells and the irradiance-dependent module temperature of the bottom cell. Our model calculates the temperature of the tandem module by taking into account the performance, spectral working range and luminescent coupling of the different tandem devices, enabling an irradiance- and weather-dependent yield analysis for these modules. We apply the model to compare two types of two junction devices, a GaInP/GaAs monolithically grown tandem device, and a GaInP top cell stacked on a Si bottom cell, the present two best dual junction devices. When the subcells are series connected both technologies perform equally well. The performance of the GaInP/Si can be significantly improved relatively by 5.8% using 3-terminal (3T) devices with a back-contacted bottom cell instead of a 2T configuration, showing a possible benefit when using Si back contacted cells. For GaInP/Si, the 3T-device works as well as the 4T-device, enabling the integration of monolithic tandem cells into modules at comparably high efficiencies.
AB - We present a yield analysis of tandem devices consisting of GaInP top cells on Si or GaAs bottom cells with different terminal configurations. Inputs are the I-V and external quantum efficiency of the individual subcells and the irradiance-dependent module temperature of the bottom cell. Our model calculates the temperature of the tandem module by taking into account the performance, spectral working range and luminescent coupling of the different tandem devices, enabling an irradiance- and weather-dependent yield analysis for these modules. We apply the model to compare two types of two junction devices, a GaInP/GaAs monolithically grown tandem device, and a GaInP top cell stacked on a Si bottom cell, the present two best dual junction devices. When the subcells are series connected both technologies perform equally well. The performance of the GaInP/Si can be significantly improved relatively by 5.8% using 3-terminal (3T) devices with a back-contacted bottom cell instead of a 2T configuration, showing a possible benefit when using Si back contacted cells. For GaInP/Si, the 3T-device works as well as the 4T-device, enabling the integration of monolithic tandem cells into modules at comparably high efficiencies.
UR - http://www.scopus.com/inward/record.url?scp=85051923095&partnerID=8YFLogxK
U2 - 10.1063/1.5049319
DO - 10.1063/1.5049319
M3 - Conference contribution
AN - SCOPUS:85051923095
SN - 9780735417151
T3 - AIP Conference Proceedings
BT - SiliconPV 2018, the 8th International Conference on Crystalline Silicon Photovoltaics
A2 - Brendel, Rolf
A2 - Poortmans, Jef
A2 - Weeber, Arthur
A2 - Hahn, Giso
A2 - Ballif, Christophe
A2 - Glunz, Stefan
A2 - Ribeyron, Pierre-Jean
T2 - SiliconPV 2018: The 8th International Conference on Crystalline Silicon Photovoltaics
Y2 - 19 March 2018 through 21 March 2018
ER -