Details
| Original language | English |
|---|---|
| Title of host publication | Damage to VUV, EUV, and X-Ray Optics II |
| Publication status | Published - 18 May 2009 |
| Externally published | Yes |
| Event | Damage to VUV, EUV, and X-Ray Optics II - Prague, Czech Republic Duration: 21 Apr 2009 → 23 Apr 2009 |
Publication series
| Name | Proceedings of SPIE - The International Society for Optical Engineering |
|---|---|
| Volume | 7361 |
| ISSN (Print) | 0277-786X |
Abstract
The utilization of nanostructured materials for modern applications gained more and more importance during the last few years. As examples super-fluorescent quantum dots, the use of carbon nano tubes (CNTs) in microelectronics, electrospun fibers in filter membranes, thin film coatings for solar cells, mirrors or LEDs, semiconductor electronics, and functionalized surfaces may be named to address only a few topics. To optimize the systems and enable the full range of capabilities of nanostructures a thorough characterization of the surface-near topography (e.g. roughness, thickness, lateral dimension) as well as of the chemical composition is essential. As a versatile tool for spatial and chemical characterization XUV reflectometry, scatterometry and diffractometry is proposed. Three different experimental setups have been realized evaluating spectral resolved reflectance under constant incidence angle, angular resolved reflectance at a constant wavelength, or a combined approach using laboratory scaled XUV sources to gain insight into chemical composition, film thickness and surface/interface roughness. Experiments on near-edge X-ray absorption fine structure spectroscopy (NEXAFS) at the carbon K-edge have been performed. The investigated systems range from synthetic polymers (PMMA, PI) over organic substances (humic acids) to biological matter (lipids), delivering unique spectra for each compound. Thus NEXAFS spectroscopy using a table-top XUV source could be established as a highly surface sensitive fingerprint method for chemical analysis. Future extended experiments will investigate the silicon L-edge where e.g. silicon oxide interlayers below high-k or other nano-layered material on Sisubstrates depict a technological important group of composite systems.
Keywords
- 13.5nm, Carbon K-edge, EUV/XUV, Interface roughness, Lithography, Material analysis, NEXAFS, Silicon L-edge, Soft X-rays, Surface analysis, Thin films, Water window
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Condensed Matter Physics
- Computer Science(all)
- Computer Science Applications
- Mathematics(all)
- Applied Mathematics
- Engineering(all)
- Electrical and Electronic Engineering
Cite this
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- Apa
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- BibTeX
- RIS
Damage to VUV, EUV, and X-Ray Optics II. 2009. 736113 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 7361).
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
}
TY - GEN
T1 - XUV metrology
T2 - Damage to VUV, EUV, and X-Ray Optics II
AU - Banyay, M.
AU - Juschkin, L.
AU - Bücker, T.
AU - Loosen, P.
AU - Bayer, A.
AU - Barkusky, F.
AU - Döring, Stefan
AU - Peth, C.
AU - Mann, K.
AU - Blaschke, H.
AU - Balasa, Istvan
AU - Ristau, Detlev
PY - 2009/5/18
Y1 - 2009/5/18
N2 - The utilization of nanostructured materials for modern applications gained more and more importance during the last few years. As examples super-fluorescent quantum dots, the use of carbon nano tubes (CNTs) in microelectronics, electrospun fibers in filter membranes, thin film coatings for solar cells, mirrors or LEDs, semiconductor electronics, and functionalized surfaces may be named to address only a few topics. To optimize the systems and enable the full range of capabilities of nanostructures a thorough characterization of the surface-near topography (e.g. roughness, thickness, lateral dimension) as well as of the chemical composition is essential. As a versatile tool for spatial and chemical characterization XUV reflectometry, scatterometry and diffractometry is proposed. Three different experimental setups have been realized evaluating spectral resolved reflectance under constant incidence angle, angular resolved reflectance at a constant wavelength, or a combined approach using laboratory scaled XUV sources to gain insight into chemical composition, film thickness and surface/interface roughness. Experiments on near-edge X-ray absorption fine structure spectroscopy (NEXAFS) at the carbon K-edge have been performed. The investigated systems range from synthetic polymers (PMMA, PI) over organic substances (humic acids) to biological matter (lipids), delivering unique spectra for each compound. Thus NEXAFS spectroscopy using a table-top XUV source could be established as a highly surface sensitive fingerprint method for chemical analysis. Future extended experiments will investigate the silicon L-edge where e.g. silicon oxide interlayers below high-k or other nano-layered material on Sisubstrates depict a technological important group of composite systems.
AB - The utilization of nanostructured materials for modern applications gained more and more importance during the last few years. As examples super-fluorescent quantum dots, the use of carbon nano tubes (CNTs) in microelectronics, electrospun fibers in filter membranes, thin film coatings for solar cells, mirrors or LEDs, semiconductor electronics, and functionalized surfaces may be named to address only a few topics. To optimize the systems and enable the full range of capabilities of nanostructures a thorough characterization of the surface-near topography (e.g. roughness, thickness, lateral dimension) as well as of the chemical composition is essential. As a versatile tool for spatial and chemical characterization XUV reflectometry, scatterometry and diffractometry is proposed. Three different experimental setups have been realized evaluating spectral resolved reflectance under constant incidence angle, angular resolved reflectance at a constant wavelength, or a combined approach using laboratory scaled XUV sources to gain insight into chemical composition, film thickness and surface/interface roughness. Experiments on near-edge X-ray absorption fine structure spectroscopy (NEXAFS) at the carbon K-edge have been performed. The investigated systems range from synthetic polymers (PMMA, PI) over organic substances (humic acids) to biological matter (lipids), delivering unique spectra for each compound. Thus NEXAFS spectroscopy using a table-top XUV source could be established as a highly surface sensitive fingerprint method for chemical analysis. Future extended experiments will investigate the silicon L-edge where e.g. silicon oxide interlayers below high-k or other nano-layered material on Sisubstrates depict a technological important group of composite systems.
KW - 13.5nm
KW - Carbon K-edge
KW - EUV/XUV
KW - Interface roughness
KW - Lithography
KW - Material analysis
KW - NEXAFS
KW - Silicon L-edge
KW - Soft X-rays
KW - Surface analysis
KW - Thin films
KW - Water window
UR - http://www.scopus.com/inward/record.url?scp=69949170452&partnerID=8YFLogxK
U2 - 10.1117/12.833648
DO - 10.1117/12.833648
M3 - Conference contribution
AN - SCOPUS:69949170452
SN - 9780819476357
T3 - Proceedings of SPIE - The International Society for Optical Engineering
BT - Damage to VUV, EUV, and X-Ray Optics II
Y2 - 21 April 2009 through 23 April 2009
ER -