Details
| Original language | English |
|---|---|
| Title of host publication | Proceedings of the Custom Integrated Circuits Conference |
| Pages | 351-358 |
| Number of pages | 8 |
| Publication status | Published - 1999 |
| Externally published | Yes |
| Event | 1999 21st IEEE Annual Custom Integrated Circuits Conference, CICC '99 - San Diego, United States Duration: 16 May 1999 → 19 May 1999 |
Publication series
| Name | Proceedings of the Custom Integrated Circuits Conference |
|---|---|
| ISSN (Print) | 0886-5930 |
Abstract
Despite rapid progress in the field of RF CMOS, there is a growing interest in SiGe bipolar technology for RF and high speed applications. We have developed a 0.8 μm SiGe HBT technology with ft/fmax of 45/50 GHz (standard version for prototyping foundry operations) and an advanced SiGe:C technology with ft/fmax of 50/90 GHz (experimental status). These technologies are low cost modules that allow integration into existing CMOS technologies with less than five additional masks. Further, a low parasitics module is introduced. In the first part of this paper, the technology of the modules is described. In the second part the devices for the design of RF circuits are presented. The spectrum of devices includes: bipolar transistors, polysilicon resistors, MIM capacitances, inductors and varicaps. In the third part circuit results are presented. They include ring oscillators, VCOs, an LNA and a divider for RF applications in the GHz range.
ASJC Scopus subject areas
- Engineering(all)
- Electrical and Electronic Engineering
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Proceedings of the Custom Integrated Circuits Conference. 1999. p. 351-358 (Proceedings of the Custom Integrated Circuits Conference).
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
}
TY - GEN
T1 - Wireless communication integrated circuits with CMOS-compatible SiGe HBT technology modules
AU - Winkler, W.
AU - Borngraeber, J.
AU - Erzgraeber, He
AU - Erzgraeber, Ha
AU - Heinemann, B.
AU - Knoll, D.
AU - Osten, H. J.
AU - Pierschel, M.
AU - Pressel, K.
AU - Schley, P.
PY - 1999
Y1 - 1999
N2 - Despite rapid progress in the field of RF CMOS, there is a growing interest in SiGe bipolar technology for RF and high speed applications. We have developed a 0.8 μm SiGe HBT technology with ft/fmax of 45/50 GHz (standard version for prototyping foundry operations) and an advanced SiGe:C technology with ft/fmax of 50/90 GHz (experimental status). These technologies are low cost modules that allow integration into existing CMOS technologies with less than five additional masks. Further, a low parasitics module is introduced. In the first part of this paper, the technology of the modules is described. In the second part the devices for the design of RF circuits are presented. The spectrum of devices includes: bipolar transistors, polysilicon resistors, MIM capacitances, inductors and varicaps. In the third part circuit results are presented. They include ring oscillators, VCOs, an LNA and a divider for RF applications in the GHz range.
AB - Despite rapid progress in the field of RF CMOS, there is a growing interest in SiGe bipolar technology for RF and high speed applications. We have developed a 0.8 μm SiGe HBT technology with ft/fmax of 45/50 GHz (standard version for prototyping foundry operations) and an advanced SiGe:C technology with ft/fmax of 50/90 GHz (experimental status). These technologies are low cost modules that allow integration into existing CMOS technologies with less than five additional masks. Further, a low parasitics module is introduced. In the first part of this paper, the technology of the modules is described. In the second part the devices for the design of RF circuits are presented. The spectrum of devices includes: bipolar transistors, polysilicon resistors, MIM capacitances, inductors and varicaps. In the third part circuit results are presented. They include ring oscillators, VCOs, an LNA and a divider for RF applications in the GHz range.
UR - http://www.scopus.com/inward/record.url?scp=0032597791&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:0032597791
SN - 0780354443
T3 - Proceedings of the Custom Integrated Circuits Conference
SP - 351
EP - 358
BT - Proceedings of the Custom Integrated Circuits Conference
T2 - 1999 21st IEEE Annual Custom Integrated Circuits Conference, CICC '99
Y2 - 16 May 1999 through 19 May 1999
ER -