Wider latitude for sophisticated devices by incorporating carbon into crystalline Si or SiGe

Research output: Contribution to journal › Article › Research › peer review

Authors

  • H. J. Osten
  • H. Rücker
  • J. P. Liu
  • B. Heinemann

External Research Organisations

  • Leibniz Institute for High Performance Microelectronics (IHP)
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Details

Original languageEnglish
Pages (from-to)209-212
Number of pages4
JournalMicroelectronic engineering
Volume56
Issue number1-2
Early online date17 Apr 2001
Publication statusPublished - May 2001
Externally publishedYes

Abstract

Research on highly supersaturated, carbon-containing alloys on silicon substrates started only a few years ago. Meanwhile, knowledge has been accumulated on growth, strain manipulation, thermal stability, carbon effects on band structure and charge carrier transport. We review basic mechanical and electrical material properties of Si1-yCy and Si1-x-yGexCy layers grown pseudomorphically on Si(001). Adding carbon alleviates some of the constraints for strained Si1-xGex, and opens new possibilities for device application of heteroepitaxial Si-based systems. The incorporation of carbon is beneficial for: (i) improving SiGe layer properties; (ii) creating layers with new properties; and (iii) controlling dopant diffusion in microelectronic devices. A large variety of applications in microelectronic devices appears likely. The first device application ready for production is the npn-SiGe:C heterojunction bipolar transistor (HBT) with excellent static and high frequency performance.

Keywords

    Carbon incorporation, Group IV alloys, Heterojunction bipolar transistor, Silicon-germanium

ASJC Scopus subject areas

Cite this

Wider latitude for sophisticated devices by incorporating carbon into crystalline Si or SiGe. / Osten, H. J.; Rücker, H.; Liu, J. P. et al.
In: Microelectronic engineering, Vol. 56, No. 1-2, 05.2001, p. 209-212.

Research output: Contribution to journal › Article › Research › peer review

Osten HJ, Rücker H, Liu JP, Heinemann B. Wider latitude for sophisticated devices by incorporating carbon into crystalline Si or SiGe. Microelectronic engineering. 2001 May;56(1-2):209-212. Epub 2001 Apr 17. doi: 10.1016/S0167-9317(00)00529-3
Osten, H. J. ; Rücker, H. ; Liu, J. P. et al. / Wider latitude for sophisticated devices by incorporating carbon into crystalline Si or SiGe. In: Microelectronic engineering. 2001 ; Vol. 56, No. 1-2. pp. 209-212.
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AU - Heinemann, B.

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