Details
| Original language | English |
|---|---|
| Pages (from-to) | 328-330 |
| Number of pages | 3 |
| Journal | Physica B: Condensed Matter |
| Volume | 272 |
| Issue number | 1-4 |
| Publication status | Published - 1 Dec 1999 |
| Externally published | Yes |
| Event | 1999 11th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-11) - Kyoto, Jpn Duration: 19 Jul 1999 → 23 Jul 1999 |
Abstract
We demonstrate a new concept to identify the population of 1s excitons in semiconductors in the time between optical excitation and recombination. The experiment determines the overlap of electrons and holes by tracing the electron-hole exchange energy. A dominant population of excitons is only present under stringent experimental conditions.
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Electrical and Electronic Engineering
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In: Physica B: Condensed Matter, Vol. 272, No. 1-4, 01.12.1999, p. 328-330.
Research output: Contribution to journal › Conference article › Research › peer review
}
TY - JOUR
T1 - When do excitons really exist?
AU - Hägele, Daniel
AU - Hübner, Jens
AU - Rühle, W. W.
AU - Oestreich, Michael
PY - 1999/12/1
Y1 - 1999/12/1
N2 - We demonstrate a new concept to identify the population of 1s excitons in semiconductors in the time between optical excitation and recombination. The experiment determines the overlap of electrons and holes by tracing the electron-hole exchange energy. A dominant population of excitons is only present under stringent experimental conditions.
AB - We demonstrate a new concept to identify the population of 1s excitons in semiconductors in the time between optical excitation and recombination. The experiment determines the overlap of electrons and holes by tracing the electron-hole exchange energy. A dominant population of excitons is only present under stringent experimental conditions.
UR - http://www.scopus.com/inward/record.url?scp=0343244625&partnerID=8YFLogxK
U2 - 10.1016/S0921-4526(99)00384-1
DO - 10.1016/S0921-4526(99)00384-1
M3 - Conference article
AN - SCOPUS:0343244625
VL - 272
SP - 328
EP - 330
JO - Physica B: Condensed Matter
JF - Physica B: Condensed Matter
SN - 0921-4526
IS - 1-4
T2 - 1999 11th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-11)
Y2 - 19 July 1999 through 23 July 1999
ER -