Details
| Original language | English |
|---|---|
| Pages (from-to) | 233-239 |
| Number of pages | 7 |
| Journal | IEEE Journal of Photovoltaics |
| Volume | 14 |
| Issue number | 2 |
| Early online date | 22 Jan 2024 |
| Publication status | Published - Mar 2024 |
Abstract
This article presents for the first time the application of wet-chemical interfacial oxide from an industrial inline processing system for poly-Si-based passivating contacts. An excellent passivation quality is achieved by creating an interfacial oxide with a very short exposure time of 90 s in ozonized water and by adjusting the annealing temperature in a tube furnace, resulting in surface recombination current densities of 4 fA/cm 2 and 1.2 fA/cm 2 before and after a hydrogenation step, respectively. Detailed electrical characterization reveals the interplay of in-diffusion of P into the wafer and hydrogenation step. Our investigation shows that the optimum annealing temperature can differ before and after the hydrogenation step. The developed wet-chemical interfacial oxide is successfully implemented in back junction solar cells on large-area gallium-doped p-type silicon wafers (156.75 × 156.75 mm 2) featuring a phosphorus-doped poly-Si-based passivating contact at the rear side. The best cell has an efficiency of 23.6% and an open-circuit voltage of 719 mV, independently confirmed by ISFH CalTeC in Germany. Our cost calculation shows a saving of up to 17.2% in capital expenditure, 5.2% p.a. in operating expense, and 9.0% in the footprint if the interfacial oxide is formed by an inline wet-chemical processing system instead of a plasma chamber.
Keywords
- Annealing, Furnaces, Interfacial oxide, passivating contact, Passivation, Photovoltaic cells, Production, Silicon, Temperature measurement, wet-chemical
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Electrical and Electronic Engineering
Sustainable Development Goals
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In: IEEE Journal of Photovoltaics, Vol. 14, No. 2, 03.2024, p. 233-239.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Wet-Chemically Grown Interfacial Oxide for Passivating Contacts Fabricated With an Industrial Inline Processing System
AU - Min, Byungsul
AU - Noack, Philipp
AU - Wattenberg, Bianca
AU - Dippell, Torsten
AU - Schulte-Huxel, Henning
AU - Peibst, Robby
AU - Brendel, Rolf
N1 - Funding Information: This work was supported by the State of Lower Saxony and the German Federal Ministry for Economic Affairs and Climate Action (BMWK) underGrant 03EE1012A (NanoPERC).
PY - 2024/3
Y1 - 2024/3
N2 - This article presents for the first time the application of wet-chemical interfacial oxide from an industrial inline processing system for poly-Si-based passivating contacts. An excellent passivation quality is achieved by creating an interfacial oxide with a very short exposure time of 90 s in ozonized water and by adjusting the annealing temperature in a tube furnace, resulting in surface recombination current densities of 4 fA/cm 2 and 1.2 fA/cm 2 before and after a hydrogenation step, respectively. Detailed electrical characterization reveals the interplay of in-diffusion of P into the wafer and hydrogenation step. Our investigation shows that the optimum annealing temperature can differ before and after the hydrogenation step. The developed wet-chemical interfacial oxide is successfully implemented in back junction solar cells on large-area gallium-doped p-type silicon wafers (156.75 × 156.75 mm 2) featuring a phosphorus-doped poly-Si-based passivating contact at the rear side. The best cell has an efficiency of 23.6% and an open-circuit voltage of 719 mV, independently confirmed by ISFH CalTeC in Germany. Our cost calculation shows a saving of up to 17.2% in capital expenditure, 5.2% p.a. in operating expense, and 9.0% in the footprint if the interfacial oxide is formed by an inline wet-chemical processing system instead of a plasma chamber.
AB - This article presents for the first time the application of wet-chemical interfacial oxide from an industrial inline processing system for poly-Si-based passivating contacts. An excellent passivation quality is achieved by creating an interfacial oxide with a very short exposure time of 90 s in ozonized water and by adjusting the annealing temperature in a tube furnace, resulting in surface recombination current densities of 4 fA/cm 2 and 1.2 fA/cm 2 before and after a hydrogenation step, respectively. Detailed electrical characterization reveals the interplay of in-diffusion of P into the wafer and hydrogenation step. Our investigation shows that the optimum annealing temperature can differ before and after the hydrogenation step. The developed wet-chemical interfacial oxide is successfully implemented in back junction solar cells on large-area gallium-doped p-type silicon wafers (156.75 × 156.75 mm 2) featuring a phosphorus-doped poly-Si-based passivating contact at the rear side. The best cell has an efficiency of 23.6% and an open-circuit voltage of 719 mV, independently confirmed by ISFH CalTeC in Germany. Our cost calculation shows a saving of up to 17.2% in capital expenditure, 5.2% p.a. in operating expense, and 9.0% in the footprint if the interfacial oxide is formed by an inline wet-chemical processing system instead of a plasma chamber.
KW - Annealing
KW - Furnaces
KW - Interfacial oxide
KW - passivating contact
KW - Passivation
KW - Photovoltaic cells
KW - Production
KW - Silicon
KW - Temperature measurement
KW - wet-chemical
UR - http://www.scopus.com/inward/record.url?scp=85183979498&partnerID=8YFLogxK
U2 - 10.1109/JPHOTOV.2024.3352836
DO - 10.1109/JPHOTOV.2024.3352836
M3 - Article
AN - SCOPUS:85183979498
VL - 14
SP - 233
EP - 239
JO - IEEE Journal of Photovoltaics
JF - IEEE Journal of Photovoltaics
SN - 2156-3381
IS - 2
ER -