Details
| Original language | English |
|---|---|
| Pages (from-to) | 108-113 |
| Number of pages | 6 |
| Journal | Energy Procedia |
| Volume | 38 |
| Publication status | Published - 2013 |
| Event | 3rd International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2013 - Hamelin, Germany Duration: 25 Mar 2013 → 27 Mar 2013 |
Abstract
We use SENTAURUS DEVICE simulation to investigate the effect of "passivated emitter and rear cell" (PERC) and "passivated emitter and rear, totally-diffused" (PERT) device architecture on the solar cells' weak light performances. Injection-dependent carrier lifetimes can also strongly influence the fill factor and weak light performance of solar cells. To focus on the effect of the device architecture alone, we present here simulations with essentially injection independent carrier lifetimes. In our simulations we find that at 1/10 of AM 1.5G ("tenth of one sun") the standard industrial cell architecture with full-area BSF loses about 1.7% efficiency and the similar PERT cell structure loses 1.4% to 1.6%, depending on wafer quality. The PERC cells suffer only 1.2% to 1.5% loss of efficiency at 1/10 sun. The lower losses for PERC solar cells result from the fact that at lower illumination intensity the relatively high resistance of PERC cells is less significant. We furthermore find that only for PERC solar cells the optimum wafer doping concentration depends on the illumination intensity.
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In: Energy Procedia, Vol. 38, 2013, p. 108-113.
Research output: Contribution to journal › Conference article › Research › peer review
}
TY - JOUR
T1 - Weak light performance of PERC, PERT and standard industrial solar cells
AU - Krügener, Jan
AU - Harder, Nils Peter
PY - 2013
Y1 - 2013
N2 - We use SENTAURUS DEVICE simulation to investigate the effect of "passivated emitter and rear cell" (PERC) and "passivated emitter and rear, totally-diffused" (PERT) device architecture on the solar cells' weak light performances. Injection-dependent carrier lifetimes can also strongly influence the fill factor and weak light performance of solar cells. To focus on the effect of the device architecture alone, we present here simulations with essentially injection independent carrier lifetimes. In our simulations we find that at 1/10 of AM 1.5G ("tenth of one sun") the standard industrial cell architecture with full-area BSF loses about 1.7% efficiency and the similar PERT cell structure loses 1.4% to 1.6%, depending on wafer quality. The PERC cells suffer only 1.2% to 1.5% loss of efficiency at 1/10 sun. The lower losses for PERC solar cells result from the fact that at lower illumination intensity the relatively high resistance of PERC cells is less significant. We furthermore find that only for PERC solar cells the optimum wafer doping concentration depends on the illumination intensity.
AB - We use SENTAURUS DEVICE simulation to investigate the effect of "passivated emitter and rear cell" (PERC) and "passivated emitter and rear, totally-diffused" (PERT) device architecture on the solar cells' weak light performances. Injection-dependent carrier lifetimes can also strongly influence the fill factor and weak light performance of solar cells. To focus on the effect of the device architecture alone, we present here simulations with essentially injection independent carrier lifetimes. In our simulations we find that at 1/10 of AM 1.5G ("tenth of one sun") the standard industrial cell architecture with full-area BSF loses about 1.7% efficiency and the similar PERT cell structure loses 1.4% to 1.6%, depending on wafer quality. The PERC cells suffer only 1.2% to 1.5% loss of efficiency at 1/10 sun. The lower losses for PERC solar cells result from the fact that at lower illumination intensity the relatively high resistance of PERC cells is less significant. We furthermore find that only for PERC solar cells the optimum wafer doping concentration depends on the illumination intensity.
KW - PERC
KW - PERT
KW - Simulation
KW - Weak light
UR - http://www.scopus.com/inward/record.url?scp=84898757650&partnerID=8YFLogxK
U2 - 10.1016/j.egypro.2013.07.256
DO - 10.1016/j.egypro.2013.07.256
M3 - Conference article
AN - SCOPUS:84898757650
VL - 38
SP - 108
EP - 113
JO - Energy Procedia
JF - Energy Procedia
SN - 1876-6102
T2 - 3rd International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2013
Y2 - 25 March 2013 through 27 March 2013
ER -