Details
| Original language | English |
|---|---|
| Article number | 32 |
| Journal | Microsystems and Nanoengineering |
| Volume | 7 |
| Issue number | 1 |
| Publication status | Published - Dec 2021 |
| Externally published | Yes |
Abstract
The integration of gallium nitride (GaN) nanowire light-emitting diodes (nanoLEDs) on flexible substrates offers opportunities for applications beyond rigid solid-state lighting (e.g., for wearable optoelectronics and bendable inorganic displays). Here, we report on a fast physical transfer route based on femtosecond laser lift-off (fs-LLO) to realize wafer-scale top–down GaN nanoLED arrays on unconventional platforms. Combined with photolithography and hybrid etching processes, we successfully transferred GaN blue nanoLEDs from a full two-inch sapphire substrate onto a flexible copper (Cu) foil with a high nanowire density (~107 wires/cm2), transfer yield (~99.5%), and reproducibility. Various nanoanalytical measurements were conducted to evaluate the performance and limitations of the fs-LLO technique as well as to gain insights into physical material properties such as strain relaxation and assess the maturity of the transfer process. This work could enable the easy recycling of native growth substrates and inspire the development of large-scale hybrid GaN nanowire optoelectronic devices by solely employing standard epitaxial LED wafers (i.e., customized LED wafers with additional embedded sacrificial materials and a complicated growth process are not required).
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Atomic and Molecular Physics, and Optics
- Materials Science(all)
- Materials Science (miscellaneous)
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Industrial and Manufacturing Engineering
- Engineering(all)
- Electrical and Electronic Engineering
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In: Microsystems and Nanoengineering, Vol. 7, No. 1, 32, 12.2021.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Wafer-scale transfer route for top–down III-nitride nanowire LED arrays based on the femtosecond laser lift-off technique
AU - Yulianto, Nursidik
AU - Refino, Andam Deatama
AU - Syring, Alina
AU - Majid, Nurhalis
AU - Mariana, Shinta
AU - Schnell, Patrick
AU - Wahyuono, Ruri Agung
AU - Triyana, Kuwat
AU - Meierhofer, Florian
AU - Daum, Winfried
AU - Abdi, Fatwa F.
AU - Voss, Tobias
AU - Wasisto, Hutomo Suryo
AU - Waag, Andreas
N1 - Funding information: This work was funded in part by the Lower Saxony Ministry for Science and Culture (N-MWK) within the group of “LENA-OptoSense”, in part by the European Union’s Horizon 2020 research and innovation program within the project of “ChipScope—Overcoming the Limits of Diffraction with Super-Resolution Lighting on a Chip” under grant agreement no. 737089, and in part by the Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) within “Excellence Strategy of EXC-2123 QuantumFrontiers— 390837967”. The authors thank Christoph Margenfeld, Irene Manglano Clavero, and Jana Hartmann for GaN LED wafer preparation in the ec2. Nursidik Yulianto, Nurhalis Majid, and Andam Deatama Refino acknowledge the Ministry of Research, Technology and Higher Education of the Republic of Indonesia (RISTEKDIKTI) for the Ph.D. scholarships of RISET-Pro under no. 34/ RISET-Pro/FGS/III/2019, RISET-Pro under no. 35/RISET-Pro/FGS/III/2019, and BPP-LN under no. T/912/D3.2/KD.02.01/2019. Support from the Indonesian-German Centre for Nano and Quantum Technologies (IG-Nano) is also acknowledged. Alina Syring gratefully acknowledges support by the DFG Research Training Group GrK1952/1 “Metrology for Complex Nanosystems” and the “Braunschweig International Graduate School of Metrology (B-IGSM)”. Florian Meierhofer and Tobias Voss also acknowledge financial support from the strategic research initiative “Quantum-and Nanometrology (QUANOMET)”. The authors thank Angelika Schmidt, Juliane Breitfelder, Aileen Michalski, and Diana Herz for their technical support during the experiments and Steffen Bornemann for his assistance with the fs-laser micromachining setup development.
PY - 2021/12
Y1 - 2021/12
N2 - The integration of gallium nitride (GaN) nanowire light-emitting diodes (nanoLEDs) on flexible substrates offers opportunities for applications beyond rigid solid-state lighting (e.g., for wearable optoelectronics and bendable inorganic displays). Here, we report on a fast physical transfer route based on femtosecond laser lift-off (fs-LLO) to realize wafer-scale top–down GaN nanoLED arrays on unconventional platforms. Combined with photolithography and hybrid etching processes, we successfully transferred GaN blue nanoLEDs from a full two-inch sapphire substrate onto a flexible copper (Cu) foil with a high nanowire density (~107 wires/cm2), transfer yield (~99.5%), and reproducibility. Various nanoanalytical measurements were conducted to evaluate the performance and limitations of the fs-LLO technique as well as to gain insights into physical material properties such as strain relaxation and assess the maturity of the transfer process. This work could enable the easy recycling of native growth substrates and inspire the development of large-scale hybrid GaN nanowire optoelectronic devices by solely employing standard epitaxial LED wafers (i.e., customized LED wafers with additional embedded sacrificial materials and a complicated growth process are not required).
AB - The integration of gallium nitride (GaN) nanowire light-emitting diodes (nanoLEDs) on flexible substrates offers opportunities for applications beyond rigid solid-state lighting (e.g., for wearable optoelectronics and bendable inorganic displays). Here, we report on a fast physical transfer route based on femtosecond laser lift-off (fs-LLO) to realize wafer-scale top–down GaN nanoLED arrays on unconventional platforms. Combined with photolithography and hybrid etching processes, we successfully transferred GaN blue nanoLEDs from a full two-inch sapphire substrate onto a flexible copper (Cu) foil with a high nanowire density (~107 wires/cm2), transfer yield (~99.5%), and reproducibility. Various nanoanalytical measurements were conducted to evaluate the performance and limitations of the fs-LLO technique as well as to gain insights into physical material properties such as strain relaxation and assess the maturity of the transfer process. This work could enable the easy recycling of native growth substrates and inspire the development of large-scale hybrid GaN nanowire optoelectronic devices by solely employing standard epitaxial LED wafers (i.e., customized LED wafers with additional embedded sacrificial materials and a complicated growth process are not required).
UR - http://www.scopus.com/inward/record.url?scp=85104864375&partnerID=8YFLogxK
U2 - 10.1038/s41378-021-00257-y
DO - 10.1038/s41378-021-00257-y
M3 - Article
AN - SCOPUS:85104864375
VL - 7
JO - Microsystems and Nanoengineering
JF - Microsystems and Nanoengineering
IS - 1
M1 - 32
ER -