Details
| Original language | English |
|---|---|
| Title of host publication | Proceedings of the 5th International Conference on Thermal and Mechanical Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2004 |
| Editors | L.J. Ernst, G.Q. Zhang, P. Rodgers, O. Saint Leger |
| Pages | 367-372 |
| Number of pages | 6 |
| Publication status | Published - 2004 |
| Event | 5th International Conference on Thermal and Mechanical Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2004 - Brussels, Belgium Duration: 10 May 2004 → 12 May 2004 |
Publication series
| Name | Proceedings of the 5th International Conference on Thermal and Mechanical Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2004 |
|---|
Abstract
The understanding of degradation phenomena in dual-damascene (DD) copper metallization structures due to high current densities and temperatures in reliability stress tests has been an important challenge during the past decades. Compared to standard Al(Cu)-based and W-plug interconnects for copper as metallization material the failure mechanism might change caused by the different architecture of a DD interconnect system. The determination of the mass transport pathway is one major point of concern. Electromigration for instance can occur through a number of different pathways like the surface, the interface, and the grain boundaries. In a DD copper metallization, interface diffusion was determined as main degradation mechanism. Beside the electromigration due to the joule heating, temperature gradient driven thermomigration will occur. Out of the mismatch between the properties of the different materials in the DD interconnect like thermal expansion coefficient (TCE) mechanical stress in the metallization system arises. Out of this the reliability prediction due to the different migration mechanisms like electro-thermo- and stressmigration as well as the different migration path become more and more important and have to be considered. In this study the void formation, as well as the mass flux divergence distribution out of the static simulations, in a copper metallization was investigated by finite element simulation (using ANSYS®). A calculation routine is used for the determination of the mass flux divergences and void formation in the model. First the suitability of the simulation will be shown by the calculation of the void formation for a copper interconnect structure taken from the literature. For comparison of the different influences default models were created. Based on the default models the overlap of the metallization, the via height, the applied current density and stress free temperature was varied. The mechanical stress, the temperature and current density distribution as well as the influence of the different migration mechanisms were determined. Out of this the void formation and its localisation were calculated.
ASJC Scopus subject areas
- Engineering(all)
- General Engineering
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Proceedings of the 5th International Conference on Thermal and Mechanical Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2004. ed. / L.J. Ernst; G.Q. Zhang; P. Rodgers; O. Saint Leger. 2004. p. 367-372 (Proceedings of the 5th International Conference on Thermal and Mechanical Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2004).
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
}
TY - GEN
T1 - Void formation in a copper-via-structure depending on the stress free temperature and metallization geometry
AU - Weide-Zaage, Kirsten
AU - Dalleau, David
AU - Danto, Yves
AU - Fremont, Helene
N1 - Copyright: Copyright 2012 Elsevier B.V., All rights reserved.
PY - 2004
Y1 - 2004
N2 - The understanding of degradation phenomena in dual-damascene (DD) copper metallization structures due to high current densities and temperatures in reliability stress tests has been an important challenge during the past decades. Compared to standard Al(Cu)-based and W-plug interconnects for copper as metallization material the failure mechanism might change caused by the different architecture of a DD interconnect system. The determination of the mass transport pathway is one major point of concern. Electromigration for instance can occur through a number of different pathways like the surface, the interface, and the grain boundaries. In a DD copper metallization, interface diffusion was determined as main degradation mechanism. Beside the electromigration due to the joule heating, temperature gradient driven thermomigration will occur. Out of the mismatch between the properties of the different materials in the DD interconnect like thermal expansion coefficient (TCE) mechanical stress in the metallization system arises. Out of this the reliability prediction due to the different migration mechanisms like electro-thermo- and stressmigration as well as the different migration path become more and more important and have to be considered. In this study the void formation, as well as the mass flux divergence distribution out of the static simulations, in a copper metallization was investigated by finite element simulation (using ANSYS®). A calculation routine is used for the determination of the mass flux divergences and void formation in the model. First the suitability of the simulation will be shown by the calculation of the void formation for a copper interconnect structure taken from the literature. For comparison of the different influences default models were created. Based on the default models the overlap of the metallization, the via height, the applied current density and stress free temperature was varied. The mechanical stress, the temperature and current density distribution as well as the influence of the different migration mechanisms were determined. Out of this the void formation and its localisation were calculated.
AB - The understanding of degradation phenomena in dual-damascene (DD) copper metallization structures due to high current densities and temperatures in reliability stress tests has been an important challenge during the past decades. Compared to standard Al(Cu)-based and W-plug interconnects for copper as metallization material the failure mechanism might change caused by the different architecture of a DD interconnect system. The determination of the mass transport pathway is one major point of concern. Electromigration for instance can occur through a number of different pathways like the surface, the interface, and the grain boundaries. In a DD copper metallization, interface diffusion was determined as main degradation mechanism. Beside the electromigration due to the joule heating, temperature gradient driven thermomigration will occur. Out of the mismatch between the properties of the different materials in the DD interconnect like thermal expansion coefficient (TCE) mechanical stress in the metallization system arises. Out of this the reliability prediction due to the different migration mechanisms like electro-thermo- and stressmigration as well as the different migration path become more and more important and have to be considered. In this study the void formation, as well as the mass flux divergence distribution out of the static simulations, in a copper metallization was investigated by finite element simulation (using ANSYS®). A calculation routine is used for the determination of the mass flux divergences and void formation in the model. First the suitability of the simulation will be shown by the calculation of the void formation for a copper interconnect structure taken from the literature. For comparison of the different influences default models were created. Based on the default models the overlap of the metallization, the via height, the applied current density and stress free temperature was varied. The mechanical stress, the temperature and current density distribution as well as the influence of the different migration mechanisms were determined. Out of this the void formation and its localisation were calculated.
UR - http://www.scopus.com/inward/record.url?scp=3843052429&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:3843052429
SN - 0780384202
SN - 9780780384200
T3 - Proceedings of the 5th International Conference on Thermal and Mechanical Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2004
SP - 367
EP - 372
BT - Proceedings of the 5th International Conference on Thermal and Mechanical Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2004
A2 - Ernst, L.J.
A2 - Zhang, G.Q.
A2 - Rodgers, P.
A2 - Saint Leger, O.
T2 - 5th International Conference on Thermal and Mechanical Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2004
Y2 - 10 May 2004 through 12 May 2004
ER -