Variable-range hopping in the quantum Hall regime

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Original languageEnglish
Pages (from-to)670-673
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume12
Issue number1-4
Publication statusPublished - 1 Jan 2002
Event14th International Conference on the - Prague, Czech Republic
Duration: 30 Jul 20013 Aug 2001

Abstract

We examine the scaling behavior of the transition between adjacent quantum Hall plateaus away from the critical point in the regime of variable-range hopping driven conductivity σxx. The measured temperature and frequency dependence is used for a direct evaluation of the localization length ξ. We find scaling behavior ξ∝|δν| up to large filling factor distances |δν| to the critical point. The scaling exponent γ=2.3 agrees with its proposed universal value even for samples which do not show universal behavior within the usual transition-width analysis. This demonstrates the advantage of our variable-range hopping analysis and the robustness of the localization length scaling.

Keywords

    Plateau transition, Quantum Hall effect, Scaling, Variable-range hopping

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Cite this

Variable-range hopping in the quantum Hall regime. / Hohls, F.; Zeitler, U.; Haug, R. J.
In: Physica E: Low-Dimensional Systems and Nanostructures, Vol. 12, No. 1-4, 01.01.2002, p. 670-673.

Research output: Contribution to journalConference articleResearchpeer review

Hohls F, Zeitler U, Haug RJ. Variable-range hopping in the quantum Hall regime. Physica E: Low-Dimensional Systems and Nanostructures. 2002 Jan 1;12(1-4):670-673. doi: 10.1016/S1386-9477(01)00435-0
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AU - Zeitler, U.

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