Details
Original language | English |
---|---|
Pages (from-to) | 670-673 |
Number of pages | 4 |
Journal | Physica E: Low-Dimensional Systems and Nanostructures |
Volume | 12 |
Issue number | 1-4 |
Publication status | Published - 1 Jan 2002 |
Event | 14th International Conference on the - Prague, Czech Republic Duration: 30 Jul 2001 → 3 Aug 2001 |
Abstract
We examine the scaling behavior of the transition between adjacent quantum Hall plateaus away from the critical point in the regime of variable-range hopping driven conductivity σxx. The measured temperature and frequency dependence is used for a direct evaluation of the localization length ξ. We find scaling behavior ξ∝|δν|-γ up to large filling factor distances |δν| to the critical point. The scaling exponent γ=2.3 agrees with its proposed universal value even for samples which do not show universal behavior within the usual transition-width analysis. This demonstrates the advantage of our variable-range hopping analysis and the robustness of the localization length scaling.
Keywords
- Plateau transition, Quantum Hall effect, Scaling, Variable-range hopping
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Atomic and Molecular Physics, and Optics
- Physics and Astronomy(all)
- Condensed Matter Physics
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In: Physica E: Low-Dimensional Systems and Nanostructures, Vol. 12, No. 1-4, 01.01.2002, p. 670-673.
Research output: Contribution to journal › Conference article › Research › peer review
}
TY - JOUR
T1 - Variable-range hopping in the quantum Hall regime
AU - Hohls, F.
AU - Zeitler, U.
AU - Haug, R. J.
PY - 2002/1/1
Y1 - 2002/1/1
N2 - We examine the scaling behavior of the transition between adjacent quantum Hall plateaus away from the critical point in the regime of variable-range hopping driven conductivity σxx. The measured temperature and frequency dependence is used for a direct evaluation of the localization length ξ. We find scaling behavior ξ∝|δν|-γ up to large filling factor distances |δν| to the critical point. The scaling exponent γ=2.3 agrees with its proposed universal value even for samples which do not show universal behavior within the usual transition-width analysis. This demonstrates the advantage of our variable-range hopping analysis and the robustness of the localization length scaling.
AB - We examine the scaling behavior of the transition between adjacent quantum Hall plateaus away from the critical point in the regime of variable-range hopping driven conductivity σxx. The measured temperature and frequency dependence is used for a direct evaluation of the localization length ξ. We find scaling behavior ξ∝|δν|-γ up to large filling factor distances |δν| to the critical point. The scaling exponent γ=2.3 agrees with its proposed universal value even for samples which do not show universal behavior within the usual transition-width analysis. This demonstrates the advantage of our variable-range hopping analysis and the robustness of the localization length scaling.
KW - Plateau transition
KW - Quantum Hall effect
KW - Scaling
KW - Variable-range hopping
UR - http://www.scopus.com/inward/record.url?scp=0035239529&partnerID=8YFLogxK
U2 - 10.1016/S1386-9477(01)00435-0
DO - 10.1016/S1386-9477(01)00435-0
M3 - Conference article
AN - SCOPUS:0035239529
VL - 12
SP - 670
EP - 673
JO - Physica E: Low-Dimensional Systems and Nanostructures
JF - Physica E: Low-Dimensional Systems and Nanostructures
SN - 1386-9477
IS - 1-4
T2 - 14th International Conference on the
Y2 - 30 July 2001 through 3 August 2001
ER -