Details
| Original language | English |
|---|---|
| Article number | 015 |
| Pages (from-to) | 209-212 |
| Number of pages | 4 |
| Journal | Semiconductor Science and Technology |
| Volume | 10 |
| Issue number | 2 |
| Publication status | Published - 1 Dec 1995 |
| Externally published | Yes |
Abstract
We measure the electrical conductivity in the dissipative regime between adjacent integral quantum Hall plateaus. Variable-range-hopping transport is found, in accordance with a recent theory. The characteristic temperature for hopping conduction follows a power-law dependence on filling factor. Conductivity-peak broadening with increasing current is studied and a power-law dependence is observed.
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Electrical and Electronic Engineering
- Materials Science(all)
- Materials Chemistry
Cite this
- Standard
- Harvard
- Apa
- Vancouver
- BibTeX
- RIS
In: Semiconductor Science and Technology, Vol. 10, No. 2, 015, 01.12.1995, p. 209-212.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Variable range hopping transport in the tails of the conductivity peaks between quantum Hall plateaus
AU - Koch, S.
AU - Haug, R. J.
AU - Von Klitzing, K.
AU - Ploog, K.
PY - 1995/12/1
Y1 - 1995/12/1
N2 - We measure the electrical conductivity in the dissipative regime between adjacent integral quantum Hall plateaus. Variable-range-hopping transport is found, in accordance with a recent theory. The characteristic temperature for hopping conduction follows a power-law dependence on filling factor. Conductivity-peak broadening with increasing current is studied and a power-law dependence is observed.
AB - We measure the electrical conductivity in the dissipative regime between adjacent integral quantum Hall plateaus. Variable-range-hopping transport is found, in accordance with a recent theory. The characteristic temperature for hopping conduction follows a power-law dependence on filling factor. Conductivity-peak broadening with increasing current is studied and a power-law dependence is observed.
UR - http://www.scopus.com/inward/record.url?scp=0029248708&partnerID=8YFLogxK
U2 - 10.1088/0268-1242/10/2/015
DO - 10.1088/0268-1242/10/2/015
M3 - Article
AN - SCOPUS:0029248708
VL - 10
SP - 209
EP - 212
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
SN - 0268-1242
IS - 2
M1 - 015
ER -