Details
| Original language | English |
|---|---|
| Title of host publication | 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) |
| Subtitle of host publication | Proceedings |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 2238-2242 |
| Number of pages | 5 |
| ISBN (electronic) | 978-1-7281-0494-2 |
| ISBN (print) | 978-1-7281-0495-9 |
| Publication status | Published - Jun 2019 |
| Event | 46th IEEE Photovoltaic Specialists Conference, PVSC 2019 - Chicago, United States Duration: 16 Jun 2019 → 21 Jun 2019 |
Publication series
| Name | Conference Record of the IEEE Photovoltaic Specialists Conference |
|---|---|
| ISSN (Print) | 0160-8371 |
Abstract
We investigate the ultraviolet (UV) stability of dielectric passivation layers on n+-type industry-typical phosphorus- diffused emitters with saturation current densities J0e in the range of 36 fA cm-2 to 67 fA cm-2. We prepare symmetrical silicon wafer test structures with various types of passivation layers and derive their saturation current densities from carrier lifetime measurements after exposure to different types of UV lamps. Our results reveal that UV illumination of emitters with a typical industrial silicon nitride (SiNx) passivation layer strongly increases the surface recombination. The illumination by narrow band lamps with intensity peak at 312 nm for a UV dose of 80 kWh m-2 significantly increases the J0e for these samples from 67 fA cm-2 to 507 fA cm-2. In contrast, a passivation layer stack consisting of a thermally grown silicon oxide and SiNx improves the UV stability of the samples. For this passivation layer stack, the J0e only marginally increases from 36 fA cm-2 to 46 fA cm-2. The application of this thermal SiOy/SiNx passivation layer to bifacial passivated emitter and rear cells (PERC+) results in a stable conversion efficiency after exposure to a UV dose of 24 kWh m-2. Our development of UV-stable PERC+ cells with SiOy passivation layers enables to apply UV light transmitting encapsulation materials for solar modules in order to increase the annual energy yield in the field.
Keywords
- long-term stability, PERC, PV module, reliability, surface passivation, UV degradation
ASJC Scopus subject areas
- Engineering(all)
- Control and Systems Engineering
- Engineering(all)
- Industrial and Manufacturing Engineering
- Engineering(all)
- Electrical and Electronic Engineering
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2019 IEEE 46th Photovoltaic Specialists Conference (PVSC): Proceedings. Institute of Electrical and Electronics Engineers Inc., 2019. p. 2238-2242 8980612 (Conference Record of the IEEE Photovoltaic Specialists Conference).
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
}
TY - GEN
T1 - UV-stable surface passivation for crystalline silicon cells in solar modules with UV light transmitting encapsulation materials
AU - Witteck, R.
AU - Rudolph, Marco
AU - Sperlich, H. P.
AU - Konig, M.
AU - Kohler, G.
AU - Landgraf, D.
AU - Mehlich, Heiko
AU - Köntges, Marc
AU - Dullweber, Thorsten
AU - Brendel, Rolf
AU - Schulte-Huxel, Henning
AU - Jäger, Philip
N1 - Acknowledgement: The results were generated in the NEXTSTEP project funded by German Federal Ministry for Economic Affairs and Energy under contract no. 0324171C. We would like to thank Sonja Bräunig for the wafer and cell production.
PY - 2019/6
Y1 - 2019/6
N2 - We investigate the ultraviolet (UV) stability of dielectric passivation layers on n+-type industry-typical phosphorus- diffused emitters with saturation current densities J0e in the range of 36 fA cm-2 to 67 fA cm-2. We prepare symmetrical silicon wafer test structures with various types of passivation layers and derive their saturation current densities from carrier lifetime measurements after exposure to different types of UV lamps. Our results reveal that UV illumination of emitters with a typical industrial silicon nitride (SiNx) passivation layer strongly increases the surface recombination. The illumination by narrow band lamps with intensity peak at 312 nm for a UV dose of 80 kWh m-2 significantly increases the J0e for these samples from 67 fA cm-2 to 507 fA cm-2. In contrast, a passivation layer stack consisting of a thermally grown silicon oxide and SiNx improves the UV stability of the samples. For this passivation layer stack, the J0e only marginally increases from 36 fA cm-2 to 46 fA cm-2. The application of this thermal SiOy/SiNx passivation layer to bifacial passivated emitter and rear cells (PERC+) results in a stable conversion efficiency after exposure to a UV dose of 24 kWh m-2. Our development of UV-stable PERC+ cells with SiOy passivation layers enables to apply UV light transmitting encapsulation materials for solar modules in order to increase the annual energy yield in the field.
AB - We investigate the ultraviolet (UV) stability of dielectric passivation layers on n+-type industry-typical phosphorus- diffused emitters with saturation current densities J0e in the range of 36 fA cm-2 to 67 fA cm-2. We prepare symmetrical silicon wafer test structures with various types of passivation layers and derive their saturation current densities from carrier lifetime measurements after exposure to different types of UV lamps. Our results reveal that UV illumination of emitters with a typical industrial silicon nitride (SiNx) passivation layer strongly increases the surface recombination. The illumination by narrow band lamps with intensity peak at 312 nm for a UV dose of 80 kWh m-2 significantly increases the J0e for these samples from 67 fA cm-2 to 507 fA cm-2. In contrast, a passivation layer stack consisting of a thermally grown silicon oxide and SiNx improves the UV stability of the samples. For this passivation layer stack, the J0e only marginally increases from 36 fA cm-2 to 46 fA cm-2. The application of this thermal SiOy/SiNx passivation layer to bifacial passivated emitter and rear cells (PERC+) results in a stable conversion efficiency after exposure to a UV dose of 24 kWh m-2. Our development of UV-stable PERC+ cells with SiOy passivation layers enables to apply UV light transmitting encapsulation materials for solar modules in order to increase the annual energy yield in the field.
KW - long-term stability
KW - PERC
KW - PV module
KW - reliability
KW - surface passivation
KW - UV degradation
UR - http://www.scopus.com/inward/record.url?scp=85081617006&partnerID=8YFLogxK
U2 - 10.1109/PVSC40753.2019.8980612
DO - 10.1109/PVSC40753.2019.8980612
M3 - Conference contribution
AN - SCOPUS:85081617006
SN - 978-1-7281-0495-9
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
SP - 2238
EP - 2242
BT - 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 46th IEEE Photovoltaic Specialists Conference, PVSC 2019
Y2 - 16 June 2019 through 21 June 2019
ER -