Details
| Original language | English |
|---|---|
| Article number | 1700178 |
| Journal | Physica Status Solidi - Rapid Research Letters |
| Volume | 11 |
| Issue number | 8 |
| Early online date | 17 Jul 2017 |
| Publication status | Published - Aug 2017 |
Abstract
We report on the UV radiation hardness of photovoltaic modules with bifacial n-type Passivated Emitter and Rear Totally diffused crystalline Si cells that are embedded in an encapsulation polymer with enhanced UV transparency. Modules with front junction cells featuring an AlOx/p+-type Si passivation interface at the illuminated side are stable for a UV irradiation dose of 598 kWh m−2. In contrast, irradiating modules with back junction cells featuring an a-SiNy/n+-type Si passivation interface at the illuminated side reduces the output power by 15%. The quantum efficiency of the a-SiNy-passivated module degrades in the spectral range between 300 and 1000 nm, which we ascribe to a degradation of the surface passivation. Modeling the experimental data shows that photons with an energy above 3.4 eV contribute to the degradation effect and enhance the front surface recombination current density by a factor of 15.
Keywords
- ethylene vinyl acetate, PERC solar cells, radiation hardness, silicon, solar modules, UV degradation
ASJC Scopus subject areas
- Materials Science(all)
- Physics and Astronomy(all)
- Condensed Matter Physics
Sustainable Development Goals
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In: Physica Status Solidi - Rapid Research Letters, Vol. 11, No. 8, 1700178, 08.2017.
Research output: Contribution to journal › Letter › Research › peer review
}
TY - JOUR
T1 - UV radiation hardness of photovoltaic modules featuring crystalline Si solar cells with AlOx/p+-type Si and SiNy/n+-type Si interfaces
AU - Witteck, Robert
AU - Min, Byungsul
AU - Schulte-Huxel, Henning
AU - Holst, Hendrik
AU - Veith-Wolf, Boris
AU - Kiefer, Fabian
AU - Vogt, Malte R.
AU - Köntges, Marc
AU - Peibst, Robby
AU - Brendel, Rolf
N1 - Funding Information: The results were generated in the PERC2Module project funded by German Federal Ministry for Economic Affairs and Energy under contract no. 0325641. We would like to thank the CHIP team for the cell and Susanne Blankemeyer for the module production. Publisher Copyright: © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim Copyright: Copyright 2017 Elsevier B.V., All rights reserved.
PY - 2017/8
Y1 - 2017/8
N2 - We report on the UV radiation hardness of photovoltaic modules with bifacial n-type Passivated Emitter and Rear Totally diffused crystalline Si cells that are embedded in an encapsulation polymer with enhanced UV transparency. Modules with front junction cells featuring an AlOx/p+-type Si passivation interface at the illuminated side are stable for a UV irradiation dose of 598 kWh m−2. In contrast, irradiating modules with back junction cells featuring an a-SiNy/n+-type Si passivation interface at the illuminated side reduces the output power by 15%. The quantum efficiency of the a-SiNy-passivated module degrades in the spectral range between 300 and 1000 nm, which we ascribe to a degradation of the surface passivation. Modeling the experimental data shows that photons with an energy above 3.4 eV contribute to the degradation effect and enhance the front surface recombination current density by a factor of 15.
AB - We report on the UV radiation hardness of photovoltaic modules with bifacial n-type Passivated Emitter and Rear Totally diffused crystalline Si cells that are embedded in an encapsulation polymer with enhanced UV transparency. Modules with front junction cells featuring an AlOx/p+-type Si passivation interface at the illuminated side are stable for a UV irradiation dose of 598 kWh m−2. In contrast, irradiating modules with back junction cells featuring an a-SiNy/n+-type Si passivation interface at the illuminated side reduces the output power by 15%. The quantum efficiency of the a-SiNy-passivated module degrades in the spectral range between 300 and 1000 nm, which we ascribe to a degradation of the surface passivation. Modeling the experimental data shows that photons with an energy above 3.4 eV contribute to the degradation effect and enhance the front surface recombination current density by a factor of 15.
KW - ethylene vinyl acetate
KW - PERC solar cells
KW - radiation hardness
KW - silicon
KW - solar modules
KW - UV degradation
UR - http://www.scopus.com/inward/record.url?scp=85024916364&partnerID=8YFLogxK
U2 - 10.1002/pssr.201700178
DO - 10.1002/pssr.201700178
M3 - Letter
AN - SCOPUS:85024916364
VL - 11
JO - Physica Status Solidi - Rapid Research Letters
JF - Physica Status Solidi - Rapid Research Letters
SN - 1862-6254
IS - 8
M1 - 1700178
ER -