Details
| Original language | English |
|---|---|
| Pages (from-to) | 10106-10113 |
| Number of pages | 8 |
| Journal | Nano letters |
| Volume | 24 |
| Issue number | 33 |
| Early online date | 25 Jul 2024 |
| Publication status | Published - 21 Aug 2024 |
Abstract
Strain-free GaAs/AlGaAs semiconductor quantum dots (QDs) grown by droplet etching and nanohole infilling (DENI) are highly promising candidates for the on-demand generation of indistinguishable and entangled photon sources. The spectroscopic fingerprint and quantum optical properties of QDs are significantly influenced by their morphology. The effects of nanohole geometry and infilled material on the exciton binding energies and fine structure splitting are well-understood. However, a comprehensive understanding of GaAs/AlGaAs QD morphology remains elusive. To address this, we employ high-resolution scanning transmission electron microscopy (STEM) and reverse engineering through selective chemical etching and atomic force microscopy (AFM). Cross-sectional STEM of uncapped QDs reveals an inverted conical nanohole with Al-rich sidewalls and defect-free interfaces. Subsequent selective chemical etching and AFM measurements further reveal asymmetries in element distribution. This study enhances the understanding of DENI QD morphology and provides a fundamental three-dimensional structural model for simulating and optimizing their optoelectronic properties.
Keywords
- 3D morphology, AFM, GaAs/AlGaAs, HAADF-STEM, selective chemical etching, semiconductor quantum dots
ASJC Scopus subject areas
- Chemical Engineering(all)
- Bioengineering
- Chemistry(all)
- General Chemistry
- Materials Science(all)
- General Materials Science
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Mechanical Engineering
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In: Nano letters, Vol. 24, No. 33, 21.08.2024, p. 10106-10113.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Unveiling the 3D Morphology of Epitaxial GaAs/AlGaAs Quantum Dots
AU - Zhang, Yiteng
AU - Grünewald, Lukas
AU - Cao, Xin
AU - Abdelbarey, Doaa
AU - Zheng, Xian
AU - Rugeramigabo, Eddy Patrick
AU - Verbeeck, Johan
AU - Zopf, Michael
AU - Ding, Fei
N1 - Publisher Copyright: © 2024 The Authors. Published by American Chemical Society.
PY - 2024/8/21
Y1 - 2024/8/21
N2 - Strain-free GaAs/AlGaAs semiconductor quantum dots (QDs) grown by droplet etching and nanohole infilling (DENI) are highly promising candidates for the on-demand generation of indistinguishable and entangled photon sources. The spectroscopic fingerprint and quantum optical properties of QDs are significantly influenced by their morphology. The effects of nanohole geometry and infilled material on the exciton binding energies and fine structure splitting are well-understood. However, a comprehensive understanding of GaAs/AlGaAs QD morphology remains elusive. To address this, we employ high-resolution scanning transmission electron microscopy (STEM) and reverse engineering through selective chemical etching and atomic force microscopy (AFM). Cross-sectional STEM of uncapped QDs reveals an inverted conical nanohole with Al-rich sidewalls and defect-free interfaces. Subsequent selective chemical etching and AFM measurements further reveal asymmetries in element distribution. This study enhances the understanding of DENI QD morphology and provides a fundamental three-dimensional structural model for simulating and optimizing their optoelectronic properties.
AB - Strain-free GaAs/AlGaAs semiconductor quantum dots (QDs) grown by droplet etching and nanohole infilling (DENI) are highly promising candidates for the on-demand generation of indistinguishable and entangled photon sources. The spectroscopic fingerprint and quantum optical properties of QDs are significantly influenced by their morphology. The effects of nanohole geometry and infilled material on the exciton binding energies and fine structure splitting are well-understood. However, a comprehensive understanding of GaAs/AlGaAs QD morphology remains elusive. To address this, we employ high-resolution scanning transmission electron microscopy (STEM) and reverse engineering through selective chemical etching and atomic force microscopy (AFM). Cross-sectional STEM of uncapped QDs reveals an inverted conical nanohole with Al-rich sidewalls and defect-free interfaces. Subsequent selective chemical etching and AFM measurements further reveal asymmetries in element distribution. This study enhances the understanding of DENI QD morphology and provides a fundamental three-dimensional structural model for simulating and optimizing their optoelectronic properties.
KW - 3D morphology
KW - AFM
KW - GaAs/AlGaAs
KW - HAADF-STEM
KW - selective chemical etching
KW - semiconductor quantum dots
UR - http://www.scopus.com/inward/record.url?scp=85199518257&partnerID=8YFLogxK
U2 - 10.48550/arXiv.2405.16073
DO - 10.48550/arXiv.2405.16073
M3 - Article
AN - SCOPUS:85199518257
VL - 24
SP - 10106
EP - 10113
JO - Nano letters
JF - Nano letters
SN - 1530-6984
IS - 33
ER -