Unsteady 3D LES modeling of turbulent melt flow with AC travelling EM fields for a laboratory model of the CZ silicon crystal growth system

Research output: Contribution to journalArticleResearchpeer review

Authors

  • A. Krauze
  • A. Rudevičs
  • A. Muižnieks
  • A. Sabanskis
  • N. Jekabsons
  • B. Nacke

External Research Organisations

  • University of Latvia
  • Ventspils University College
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Details

Original languageEnglish
Pages (from-to)605-611
Number of pages7
JournalMagnetohydrodynamics
Volume45
Issue number4
Publication statusPublished - 2009

Abstract

A series of 3D LES calculations of turbulent melt flow and temperature distributions in an InGaSn laboratory model with a 20" crucible for industrial Czochralski silicon single-crystal growth is presented, in which the influence of the travelling AC EM field and crystal and crucible rotations on the melt flow is shown. The applied program package was developed on the basis of the open-source code library OpenFOAM. The calculated temperature and temperature fluctuation distributions give better agreement with the previously obtained experimental results than in the formerly published calculations with 2D axisymmetric RANS turbulence models.

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Cite this

Unsteady 3D LES modeling of turbulent melt flow with AC travelling EM fields for a laboratory model of the CZ silicon crystal growth system. / Krauze, A.; Rudevičs, A.; Muižnieks, A. et al.
In: Magnetohydrodynamics, Vol. 45, No. 4, 2009, p. 605-611.

Research output: Contribution to journalArticleResearchpeer review

Krauze A, Rudevičs A, Muižnieks A, Sabanskis A, Jekabsons N, Nacke B. Unsteady 3D LES modeling of turbulent melt flow with AC travelling EM fields for a laboratory model of the CZ silicon crystal growth system. Magnetohydrodynamics. 2009;45(4):605-611. doi: 10.22364/mhd.45.4.15
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@article{5e3db7d2263f41a08255e1f62b5a2354,
title = "Unsteady 3D LES modeling of turbulent melt flow with AC travelling EM fields for a laboratory model of the CZ silicon crystal growth system",
abstract = "A series of 3D LES calculations of turbulent melt flow and temperature distributions in an InGaSn laboratory model with a 20{"} crucible for industrial Czochralski silicon single-crystal growth is presented, in which the influence of the travelling AC EM field and crystal and crucible rotations on the melt flow is shown. The applied program package was developed on the basis of the open-source code library OpenFOAM. The calculated temperature and temperature fluctuation distributions give better agreement with the previously obtained experimental results than in the formerly published calculations with 2D axisymmetric RANS turbulence models.",
author = "A. Krauze and A. Rudevi{\v c}s and A. Mui{\v z}nieks and A. Sabanskis and N. Jekabsons and B. Nacke",
year = "2009",
doi = "10.22364/mhd.45.4.15",
language = "English",
volume = "45",
pages = "605--611",
journal = "Magnetohydrodynamics",
issn = "0024-998X",
publisher = "Institute of Physics, University of Latvia",
number = "4",

}

Download

TY - JOUR

T1 - Unsteady 3D LES modeling of turbulent melt flow with AC travelling EM fields for a laboratory model of the CZ silicon crystal growth system

AU - Krauze, A.

AU - Rudevičs, A.

AU - Muižnieks, A.

AU - Sabanskis, A.

AU - Jekabsons, N.

AU - Nacke, B.

PY - 2009

Y1 - 2009

N2 - A series of 3D LES calculations of turbulent melt flow and temperature distributions in an InGaSn laboratory model with a 20" crucible for industrial Czochralski silicon single-crystal growth is presented, in which the influence of the travelling AC EM field and crystal and crucible rotations on the melt flow is shown. The applied program package was developed on the basis of the open-source code library OpenFOAM. The calculated temperature and temperature fluctuation distributions give better agreement with the previously obtained experimental results than in the formerly published calculations with 2D axisymmetric RANS turbulence models.

AB - A series of 3D LES calculations of turbulent melt flow and temperature distributions in an InGaSn laboratory model with a 20" crucible for industrial Czochralski silicon single-crystal growth is presented, in which the influence of the travelling AC EM field and crystal and crucible rotations on the melt flow is shown. The applied program package was developed on the basis of the open-source code library OpenFOAM. The calculated temperature and temperature fluctuation distributions give better agreement with the previously obtained experimental results than in the formerly published calculations with 2D axisymmetric RANS turbulence models.

UR - http://www.scopus.com/inward/record.url?scp=77950822410&partnerID=8YFLogxK

U2 - 10.22364/mhd.45.4.15

DO - 10.22364/mhd.45.4.15

M3 - Article

AN - SCOPUS:77950822410

VL - 45

SP - 605

EP - 611

JO - Magnetohydrodynamics

JF - Magnetohydrodynamics

SN - 0024-998X

IS - 4

ER -

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