Details
| Original language | English |
|---|---|
| Pages (from-to) | 463-469 |
| Number of pages | 7 |
| Journal | CARBON |
| Volume | 184 |
| Early online date | 20 Aug 2021 |
| Publication status | Published - 30 Oct 2021 |
| Externally published | Yes |
Abstract
By combining highly resolved Scanning Tunneling Potentiometry with the exceptional sample homogeneity of graphene on SiC epitaxially grown by polymer-assisted sublimation growth, we reveal local variations in the resistance associated with substrate steps. We quantify these variations and show that they are an intrinsic property of graphene on SiC. Furthermore, we trace back their origin to variations in the electronic structure of the interface and, thereby, demonstrate the crucial impact of intrinsic proximity effects in graphene on SiC. Moreover, we find a correlation of the step resistance with the local conductivity and show that at room temperature, the step resistance decreases with increasing local conductivity, whereas at low temperatures, it increases with increasing local conductivity. We attribute this inversion to an interplay between the reduction in electron-phonon scattering and potential scattering with decreasing temperature, and the efficiency of the built-up of an almost completely charge carrier depleted zone at the position of the substrate step.
Keywords
- Charge carrier depletion, Epitaxial graphene/SiC, Local-scale charge transport, Localized defects, Scanning tunneling potentiometry, Substrate steps
ASJC Scopus subject areas
- Chemistry(all)
- General Chemistry
- Materials Science(all)
- General Materials Science
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In: CARBON, Vol. 184, 30.10.2021, p. 463-469.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Unraveling the origin of local variations in the step resistance of epitaxial graphene on SiC: a quantitative scanning tunneling potentiometry study
AU - Sinterhauf, Anna
AU - Traeger, Georg A.
AU - Momeni, Davood
AU - Pierz, Klaus
AU - Schumacher, Hans Werner
AU - Wenderoth, Martin
N1 - Funding information: Financial support of the Deutsche Forschungsgemeinschaft (DFG) through project We 1889/13–1 is gratefully acknowledged. The preparation of the samples was funded by the Deutsche Forschungsgemeinschaft (DFG) under Germany's Excellence Strategy - EXC-2123 QuantumFrontiers - 390837967 .
PY - 2021/10/30
Y1 - 2021/10/30
N2 - By combining highly resolved Scanning Tunneling Potentiometry with the exceptional sample homogeneity of graphene on SiC epitaxially grown by polymer-assisted sublimation growth, we reveal local variations in the resistance associated with substrate steps. We quantify these variations and show that they are an intrinsic property of graphene on SiC. Furthermore, we trace back their origin to variations in the electronic structure of the interface and, thereby, demonstrate the crucial impact of intrinsic proximity effects in graphene on SiC. Moreover, we find a correlation of the step resistance with the local conductivity and show that at room temperature, the step resistance decreases with increasing local conductivity, whereas at low temperatures, it increases with increasing local conductivity. We attribute this inversion to an interplay between the reduction in electron-phonon scattering and potential scattering with decreasing temperature, and the efficiency of the built-up of an almost completely charge carrier depleted zone at the position of the substrate step.
AB - By combining highly resolved Scanning Tunneling Potentiometry with the exceptional sample homogeneity of graphene on SiC epitaxially grown by polymer-assisted sublimation growth, we reveal local variations in the resistance associated with substrate steps. We quantify these variations and show that they are an intrinsic property of graphene on SiC. Furthermore, we trace back their origin to variations in the electronic structure of the interface and, thereby, demonstrate the crucial impact of intrinsic proximity effects in graphene on SiC. Moreover, we find a correlation of the step resistance with the local conductivity and show that at room temperature, the step resistance decreases with increasing local conductivity, whereas at low temperatures, it increases with increasing local conductivity. We attribute this inversion to an interplay between the reduction in electron-phonon scattering and potential scattering with decreasing temperature, and the efficiency of the built-up of an almost completely charge carrier depleted zone at the position of the substrate step.
KW - Charge carrier depletion
KW - Epitaxial graphene/SiC
KW - Local-scale charge transport
KW - Localized defects
KW - Scanning tunneling potentiometry
KW - Substrate steps
UR - http://www.scopus.com/inward/record.url?scp=85113427628&partnerID=8YFLogxK
U2 - 10.1016/j.carbon.2021.08.050
DO - 10.1016/j.carbon.2021.08.050
M3 - Article
AN - SCOPUS:85113427628
VL - 184
SP - 463
EP - 469
JO - CARBON
JF - CARBON
SN - 0008-6223
ER -