Details
| Original language | English |
|---|---|
| Article number | 1700235 |
| Journal | physica status solidi (RRL) – Rapid Research Letters |
| Volume | 11 |
| Issue number | 11 |
| Publication status | Published - Oct 2017 |
Abstract
We measure very high minority-carrier lifetimes exceeding 20 ms on 1.4-Ω cm n-type Czochralski silicon wafers passivated using plasma-assisted atomic-layer-deposited Al 2O 3 on both wafer surfaces. The measured maximum effective lifetimes are surprisingly high as they significantly exceed the intrinsic lifetime limit previously reported in the literature. We are able to measure such high lifetimes by realizing an exceptionally homogeneous Al 2O 3 surface passivation on large-area samples (12.5 × 12.5 cm 2). The importance of the homogeneous passivation is demonstrated by comparison with samples of locally reduced passivation quality.
Keywords
- Al O, Auger recombination, intrinsic recombination, minority carrier lifetime, silicon, surface passivation
ASJC Scopus subject areas
- Materials Science(all)
- General Materials Science
- Physics and Astronomy(all)
- Condensed Matter Physics
Cite this
- Standard
- Harvard
- Apa
- Vancouver
- BibTeX
- RIS
In: physica status solidi (RRL) – Rapid Research Letters, Vol. 11, No. 11, 1700235, 10.2017.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Unexpectedly high minority-carrier lifetimes exceeding 20 ms measured on 1.4-Ωcm n-type silicon wafers
AU - Veith-Wolf, Boris A.
AU - Schmidt, Jan
N1 - Publisher Copyright: © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
PY - 2017/10
Y1 - 2017/10
N2 - We measure very high minority-carrier lifetimes exceeding 20 ms on 1.4-Ω cm n-type Czochralski silicon wafers passivated using plasma-assisted atomic-layer-deposited Al 2O 3 on both wafer surfaces. The measured maximum effective lifetimes are surprisingly high as they significantly exceed the intrinsic lifetime limit previously reported in the literature. We are able to measure such high lifetimes by realizing an exceptionally homogeneous Al 2O 3 surface passivation on large-area samples (12.5 × 12.5 cm 2). The importance of the homogeneous passivation is demonstrated by comparison with samples of locally reduced passivation quality.
AB - We measure very high minority-carrier lifetimes exceeding 20 ms on 1.4-Ω cm n-type Czochralski silicon wafers passivated using plasma-assisted atomic-layer-deposited Al 2O 3 on both wafer surfaces. The measured maximum effective lifetimes are surprisingly high as they significantly exceed the intrinsic lifetime limit previously reported in the literature. We are able to measure such high lifetimes by realizing an exceptionally homogeneous Al 2O 3 surface passivation on large-area samples (12.5 × 12.5 cm 2). The importance of the homogeneous passivation is demonstrated by comparison with samples of locally reduced passivation quality.
KW - Al O
KW - Auger recombination
KW - intrinsic recombination
KW - minority carrier lifetime
KW - silicon
KW - surface passivation
UR - http://www.scopus.com/inward/record.url?scp=85030319432&partnerID=8YFLogxK
U2 - 10.1002/pssr.201700235
DO - 10.1002/pssr.201700235
M3 - Article
VL - 11
JO - physica status solidi (RRL) – Rapid Research Letters
JF - physica status solidi (RRL) – Rapid Research Letters
SN - 1862-6270
IS - 11
M1 - 1700235
ER -