Details
| Original language | English |
|---|---|
| Article number | 071101 |
| Journal | Journal of applied physics |
| Volume | 109 |
| Issue number | 7 |
| Publication status | Published - 1 Apr 2011 |
| Externally published | Yes |
Abstract
Extensive investigations on industrial multicrystalline silicon solar cells have shown that, for standard 1 cm material, acid-etched texturization, and in absence of strong ohmic shunts, there are three different types of breakdown appearing in different reverse bias ranges. Between -4 and -9 V there is early breakdown (type 1), which is due to Al contamination of the surface. Between -9 and -13 V defect-induced breakdown (type 2) dominates, which is due to metal-containing precipitates lying within recombination-active grain boundaries. Beyond -13 V we may find in addition avalanche breakdown (type 3) at etch pits, which is characterized by a steep slope of the I-V characteristic, avalanche carrier multiplication by impact ionization, and a negative temperature coefficient of the reverse current. If instead of acid-etching alkaline-etching is used, all these breakdown classes also appear, but their onset voltage is enlarged by several volts. Also for cells made from upgraded metallurgical grade material these classes can be distinguished. However, due to the higher net doping concentration of this material, their onset voltage is considerably reduced here.
ASJC Scopus subject areas
- Physics and Astronomy(all)
- General Physics and Astronomy
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In: Journal of applied physics, Vol. 109, No. 7, 071101, 01.04.2011.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Understanding junction breakdown in multicrystalline solar cells
AU - Breitenstein, Otwin
AU - Bauer, Jan
AU - Bothe, Karsten
AU - Kwapil, Wolfram
AU - Lausch, Dominik
AU - Rau, Uwe
AU - Schmidt, Jan
AU - Schneemann, Matthias
AU - Schubert, Martin C.
AU - Wagner, Jan Martin
AU - Warta, Wilhelm
N1 - Funding Information: This work was supported by the BMU Project No. 0 327 650 “SolarFocus.” The authors are grateful to H. Blumtritt, N. Zakharov, U. Hlawatsch (all Halle), and A. Lotnyk (Kiel) for experimental cooperation and to T. Kirchartz (Jülich) for discussing the text. WILEY-VCH (Weinheim) is acknowledged for their permission to reproduce Figs. .
PY - 2011/4/1
Y1 - 2011/4/1
N2 - Extensive investigations on industrial multicrystalline silicon solar cells have shown that, for standard 1 cm material, acid-etched texturization, and in absence of strong ohmic shunts, there are three different types of breakdown appearing in different reverse bias ranges. Between -4 and -9 V there is early breakdown (type 1), which is due to Al contamination of the surface. Between -9 and -13 V defect-induced breakdown (type 2) dominates, which is due to metal-containing precipitates lying within recombination-active grain boundaries. Beyond -13 V we may find in addition avalanche breakdown (type 3) at etch pits, which is characterized by a steep slope of the I-V characteristic, avalanche carrier multiplication by impact ionization, and a negative temperature coefficient of the reverse current. If instead of acid-etching alkaline-etching is used, all these breakdown classes also appear, but their onset voltage is enlarged by several volts. Also for cells made from upgraded metallurgical grade material these classes can be distinguished. However, due to the higher net doping concentration of this material, their onset voltage is considerably reduced here.
AB - Extensive investigations on industrial multicrystalline silicon solar cells have shown that, for standard 1 cm material, acid-etched texturization, and in absence of strong ohmic shunts, there are three different types of breakdown appearing in different reverse bias ranges. Between -4 and -9 V there is early breakdown (type 1), which is due to Al contamination of the surface. Between -9 and -13 V defect-induced breakdown (type 2) dominates, which is due to metal-containing precipitates lying within recombination-active grain boundaries. Beyond -13 V we may find in addition avalanche breakdown (type 3) at etch pits, which is characterized by a steep slope of the I-V characteristic, avalanche carrier multiplication by impact ionization, and a negative temperature coefficient of the reverse current. If instead of acid-etching alkaline-etching is used, all these breakdown classes also appear, but their onset voltage is enlarged by several volts. Also for cells made from upgraded metallurgical grade material these classes can be distinguished. However, due to the higher net doping concentration of this material, their onset voltage is considerably reduced here.
UR - http://www.scopus.com/inward/record.url?scp=79955444792&partnerID=8YFLogxK
U2 - 10.1063/1.3562200
DO - 10.1063/1.3562200
M3 - Article
AN - SCOPUS:79955444792
VL - 109
JO - Journal of applied physics
JF - Journal of applied physics
SN - 0021-8979
IS - 7
M1 - 071101
ER -