Details
| Original language | English |
|---|---|
| Article number | 205303 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 83 |
| Issue number | 20 |
| Publication status | Published - 3 May 2011 |
Abstract
The adsorption and surface segregation behavior of elemental boron (B) deposited on Si(111) have been studied by ultraviolet photoelectron spectroscopy and accompanying reflection high-energy electron diffraction as a function of the B coverage (cB) and annealing temperature (T). Our results clearly demonstrate an effective incorporation of B into subsurface sites at T > 800 K and formation of a well-ordered (√3×√3)R30 ° surface superstructure. Thereby, a critical cB of about 0.6 monolayers (ML) was determined for different conditions to prevent surface defects resulting from Si dangling bonds, which appear as surface states at 0.4 eV below the Fermi level. Annealing of the defect-free (√3×√3)R30° superstructure covered by several MLs Si at T ≥ 1040 K results in a renewal of the perfect B-induced Si surface structure, even after several deposition and annealing cycles. This indicates a dominance of B surface segregation over bulk diffusion. Significant B bulk diffusion commences only above 1100 K. Differences were found for spectra obtained for the B-induced surface structures formed after deposition and surface segregation, respectively. An additional surface state appeared at 2.1 eV below the Fermi level after deposition of 0.6 ML B. The state could be attributed to boron-boron interaction due to the presence of small clusters at the surface. This surface state did not disappear after high-T annealing and was not observed for lower cB and after B surface segregation, respectively.
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Condensed Matter Physics
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In: Physical Review B - Condensed Matter and Materials Physics, Vol. 83, No. 20, 205303, 03.05.2011.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Ultraviolet photoelectron spectroscopic study of boron adsorption and surface segregation on Si(111)
AU - Krügener, J.
AU - Osten, H. J.
AU - Fissel, A.
PY - 2011/5/3
Y1 - 2011/5/3
N2 - The adsorption and surface segregation behavior of elemental boron (B) deposited on Si(111) have been studied by ultraviolet photoelectron spectroscopy and accompanying reflection high-energy electron diffraction as a function of the B coverage (cB) and annealing temperature (T). Our results clearly demonstrate an effective incorporation of B into subsurface sites at T > 800 K and formation of a well-ordered (√3×√3)R30 ° surface superstructure. Thereby, a critical cB of about 0.6 monolayers (ML) was determined for different conditions to prevent surface defects resulting from Si dangling bonds, which appear as surface states at 0.4 eV below the Fermi level. Annealing of the defect-free (√3×√3)R30° superstructure covered by several MLs Si at T ≥ 1040 K results in a renewal of the perfect B-induced Si surface structure, even after several deposition and annealing cycles. This indicates a dominance of B surface segregation over bulk diffusion. Significant B bulk diffusion commences only above 1100 K. Differences were found for spectra obtained for the B-induced surface structures formed after deposition and surface segregation, respectively. An additional surface state appeared at 2.1 eV below the Fermi level after deposition of 0.6 ML B. The state could be attributed to boron-boron interaction due to the presence of small clusters at the surface. This surface state did not disappear after high-T annealing and was not observed for lower cB and after B surface segregation, respectively.
AB - The adsorption and surface segregation behavior of elemental boron (B) deposited on Si(111) have been studied by ultraviolet photoelectron spectroscopy and accompanying reflection high-energy electron diffraction as a function of the B coverage (cB) and annealing temperature (T). Our results clearly demonstrate an effective incorporation of B into subsurface sites at T > 800 K and formation of a well-ordered (√3×√3)R30 ° surface superstructure. Thereby, a critical cB of about 0.6 monolayers (ML) was determined for different conditions to prevent surface defects resulting from Si dangling bonds, which appear as surface states at 0.4 eV below the Fermi level. Annealing of the defect-free (√3×√3)R30° superstructure covered by several MLs Si at T ≥ 1040 K results in a renewal of the perfect B-induced Si surface structure, even after several deposition and annealing cycles. This indicates a dominance of B surface segregation over bulk diffusion. Significant B bulk diffusion commences only above 1100 K. Differences were found for spectra obtained for the B-induced surface structures formed after deposition and surface segregation, respectively. An additional surface state appeared at 2.1 eV below the Fermi level after deposition of 0.6 ML B. The state could be attributed to boron-boron interaction due to the presence of small clusters at the surface. This surface state did not disappear after high-T annealing and was not observed for lower cB and after B surface segregation, respectively.
UR - http://www.scopus.com/inward/record.url?scp=79961146073&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.83.205303
DO - 10.1103/PhysRevB.83.205303
M3 - Article
AN - SCOPUS:79961146073
VL - 83
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
SN - 1098-0121
IS - 20
M1 - 205303
ER -