Details
| Original language | English |
|---|---|
| Article number | 2000177 |
| Journal | Solar RRL |
| Volume | 4 |
| Issue number | 10 |
| Early online date | 7 Aug 2020 |
| Publication status | Published - 6 Oct 2020 |
Abstract
Herein, the various measures to improve the efficiency of large-area screen-printed double-side contacted polycrystalline Si on oxide (POLO)-cells are experimentally demonstrated. The short-circuit current density Jsc increases by 0.6 mA cm−2 upon reducing the thickness of poly-Si from 25 to 10 nm due to the reduction of the parasitic absorption in the poly-Si layer at the textured front side of the cell. Additionally, it is shown for the first time that the minority carriers generated by light absorbed in the poly-Si layer can at least partially be transferred into the crystalline Si base. Remarkably high implied open-circuit voltage Voc,impl values are achieved with n-type cell precursors by introducing an hydrogenation step by AlxOy after reducing the poly-Si thickness, and by an additional annealing step after sputtering of transparent conductive oxides (TCOs). All cell precursors show Voc,impl values of up to 740 mV independent of the poly-Si thickness. A reduction in the open-circuit voltage Voc is observed during back-end processing to 728 mV as measured on the final cells. A certified cell energy conversion efficiency of 22.3% is reported.
Keywords
- passivating contacts, polycrystalline silicon, silicon solar cells, transparent conducting oxides
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Atomic and Molecular Physics, and Optics
- Energy(all)
- Energy Engineering and Power Technology
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Engineering(all)
- Electrical and Electronic Engineering
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In: Solar RRL, Vol. 4, No. 10, 2000177, 06.10.2020.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Ultra-Thin Poly-Si Layers
T2 - Passivation Quality, Utilization of Charge Carriers Generated in the Poly-Si and Application on Screen-Printed Double-Side Contacted Polycrystalline Si on Oxide Cells
AU - Larionova, Yevgeniya
AU - Schulte-Huxel, Henning
AU - Min, Byungsul
AU - Schäfer, Sören
AU - Kluge, Thomas
AU - Mehlich, Heiko
AU - Brendel, Rolf
AU - Peibst, Robby
N1 - Funding information: [ The authors thank R. Winter for the processing of the solar cells. This work was financially supported by the German Federal Ministry for Economic Affairs and Energy (BMWi) under contact number 0324171C (Nextstep) and has also partially received funding from the European Union's Horizon 2020 research and innovation program under grant agreement no 727529 (DISC). The authors thank R. Winter for the processing of the solar cells. This work was financially supported by the German Federal Ministry for Economic Affairs and Energy (BMWi) under contact number 0324171C (Nextstep) and has also partially received funding from the European Union's Horizon 2020 research and innovation program under grant agreement no 727529 (DISC).
PY - 2020/10/6
Y1 - 2020/10/6
N2 - Herein, the various measures to improve the efficiency of large-area screen-printed double-side contacted polycrystalline Si on oxide (POLO)-cells are experimentally demonstrated. The short-circuit current density Jsc increases by 0.6 mA cm−2 upon reducing the thickness of poly-Si from 25 to 10 nm due to the reduction of the parasitic absorption in the poly-Si layer at the textured front side of the cell. Additionally, it is shown for the first time that the minority carriers generated by light absorbed in the poly-Si layer can at least partially be transferred into the crystalline Si base. Remarkably high implied open-circuit voltage Voc,impl values are achieved with n-type cell precursors by introducing an hydrogenation step by AlxOy after reducing the poly-Si thickness, and by an additional annealing step after sputtering of transparent conductive oxides (TCOs). All cell precursors show Voc,impl values of up to 740 mV independent of the poly-Si thickness. A reduction in the open-circuit voltage Voc is observed during back-end processing to 728 mV as measured on the final cells. A certified cell energy conversion efficiency of 22.3% is reported.
AB - Herein, the various measures to improve the efficiency of large-area screen-printed double-side contacted polycrystalline Si on oxide (POLO)-cells are experimentally demonstrated. The short-circuit current density Jsc increases by 0.6 mA cm−2 upon reducing the thickness of poly-Si from 25 to 10 nm due to the reduction of the parasitic absorption in the poly-Si layer at the textured front side of the cell. Additionally, it is shown for the first time that the minority carriers generated by light absorbed in the poly-Si layer can at least partially be transferred into the crystalline Si base. Remarkably high implied open-circuit voltage Voc,impl values are achieved with n-type cell precursors by introducing an hydrogenation step by AlxOy after reducing the poly-Si thickness, and by an additional annealing step after sputtering of transparent conductive oxides (TCOs). All cell precursors show Voc,impl values of up to 740 mV independent of the poly-Si thickness. A reduction in the open-circuit voltage Voc is observed during back-end processing to 728 mV as measured on the final cells. A certified cell energy conversion efficiency of 22.3% is reported.
KW - passivating contacts
KW - polycrystalline silicon
KW - silicon solar cells
KW - transparent conducting oxides
UR - http://www.scopus.com/inward/record.url?scp=85089499844&partnerID=8YFLogxK
U2 - 10.1002/solr.202000177
DO - 10.1002/solr.202000177
M3 - Article
AN - SCOPUS:85089499844
VL - 4
JO - Solar RRL
JF - Solar RRL
IS - 10
M1 - 2000177
ER -