Details
| Original language | English |
|---|---|
| Article number | 186602 |
| Journal | Physical Review Letters |
| Volume | 111 |
| Issue number | 18 |
| Publication status | Published - 29 Oct 2013 |
Abstract
We advance all optical spin noise spectroscopy (SNS) in semiconductors to detection bandwidths of several hundred gigahertz by employing a sophisticated scheme of pulse trains from ultrafast laser oscillators as an optical probe. The ultrafast SNS technique avoids the need for optical pumping and enables nearly perturbation free measurements of extremely short spin dephasing times. We apply the technique to highly-n-doped bulk GaAs where magnetic field dependent measurements show unexpected large g-factor fluctuations. Calculations suggest that such large g-factor fluctuations do not necessarily result from extrinsic sample variations but are intrinsically present in every doped semiconductor due to the stochastic nature of the dopant distribution.
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In: Physical Review Letters, Vol. 111, No. 18, 186602, 29.10.2013.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Ultrahigh bandwidth spin noise spectroscopy
T2 - Detection of large g-factor fluctuations in highly-n-doped GaAs
AU - Berski, Fabian
AU - Kuhn, Hendrik
AU - Lonnemann, Jan G.
AU - Hübner, Jens
AU - Oestreich, Michael
PY - 2013/10/29
Y1 - 2013/10/29
N2 - We advance all optical spin noise spectroscopy (SNS) in semiconductors to detection bandwidths of several hundred gigahertz by employing a sophisticated scheme of pulse trains from ultrafast laser oscillators as an optical probe. The ultrafast SNS technique avoids the need for optical pumping and enables nearly perturbation free measurements of extremely short spin dephasing times. We apply the technique to highly-n-doped bulk GaAs where magnetic field dependent measurements show unexpected large g-factor fluctuations. Calculations suggest that such large g-factor fluctuations do not necessarily result from extrinsic sample variations but are intrinsically present in every doped semiconductor due to the stochastic nature of the dopant distribution.
AB - We advance all optical spin noise spectroscopy (SNS) in semiconductors to detection bandwidths of several hundred gigahertz by employing a sophisticated scheme of pulse trains from ultrafast laser oscillators as an optical probe. The ultrafast SNS technique avoids the need for optical pumping and enables nearly perturbation free measurements of extremely short spin dephasing times. We apply the technique to highly-n-doped bulk GaAs where magnetic field dependent measurements show unexpected large g-factor fluctuations. Calculations suggest that such large g-factor fluctuations do not necessarily result from extrinsic sample variations but are intrinsically present in every doped semiconductor due to the stochastic nature of the dopant distribution.
UR - http://www.scopus.com/inward/record.url?scp=84887081289&partnerID=8YFLogxK
U2 - 10.1103/PhysRevLett.111.186602
DO - 10.1103/PhysRevLett.111.186602
M3 - Article
AN - SCOPUS:84887081289
VL - 111
JO - Physical Review Letters
JF - Physical Review Letters
SN - 0031-9007
IS - 18
M1 - 186602
ER -