Details
| Original language | English |
|---|---|
| Pages (from-to) | 141-146 |
| Number of pages | 6 |
| Journal | Materials Science and Engineering B: Solid-State Materials for Advanced Technology |
| Volume | 59 |
| Issue number | 1-3 |
| Publication status | Published - 6 May 1999 |
| Externally published | Yes |
| Event | 1998 Symposium L: on Nitrides and Related Wide Band Gap Materials (E-MRS Meeting) - Strasbourg Duration: 16 Jun 1998 → 19 Jun 1998 |
Abstract
We present an investigation of the excitonic resonances in wurtzite GaN by ultrafast linear, and nonlinear optical spectroscopy. The exciton lifetime and the cooling of the exciton distribution are investigated by time-resolved photoluminescence (PL) studies of the LO-phonon replicas. We obtain a biexponential decay of the exciton number with time and find that excitons cool mainly by scattering with acoustic phonons via deformation potential interaction. Transient four-wave-mixing (FWM) studies yield the homogeneous broadening of the A-exciton and the strengths of exciton-exciton and exciton-phonon interactions. These values are comparable to other direct gap semiconductors. The biexciton binding-energy is (5.7 ± 0.3) meV. The energy splitting between A- and B-exciton is obtained with very high accuracy from quantum-beat spectroscopy.
ASJC Scopus subject areas
- Materials Science(all)
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Mechanics of Materials
- Engineering(all)
- Mechanical Engineering
Cite this
- Standard
- Harvard
- Apa
- Vancouver
- BibTeX
- RIS
In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 59, No. 1-3, 06.05.1999, p. 141-146.
Research output: Contribution to journal › Conference article › Research › peer review
}
TY - JOUR
T1 - Ultrafast physics in nitrides
AU - Hofmann, Martin R.
AU - Zimmermann, R.
AU - Hägele, Daniel
AU - Oestreich, Michael
AU - Rühle, W. W.
PY - 1999/5/6
Y1 - 1999/5/6
N2 - We present an investigation of the excitonic resonances in wurtzite GaN by ultrafast linear, and nonlinear optical spectroscopy. The exciton lifetime and the cooling of the exciton distribution are investigated by time-resolved photoluminescence (PL) studies of the LO-phonon replicas. We obtain a biexponential decay of the exciton number with time and find that excitons cool mainly by scattering with acoustic phonons via deformation potential interaction. Transient four-wave-mixing (FWM) studies yield the homogeneous broadening of the A-exciton and the strengths of exciton-exciton and exciton-phonon interactions. These values are comparable to other direct gap semiconductors. The biexciton binding-energy is (5.7 ± 0.3) meV. The energy splitting between A- and B-exciton is obtained with very high accuracy from quantum-beat spectroscopy.
AB - We present an investigation of the excitonic resonances in wurtzite GaN by ultrafast linear, and nonlinear optical spectroscopy. The exciton lifetime and the cooling of the exciton distribution are investigated by time-resolved photoluminescence (PL) studies of the LO-phonon replicas. We obtain a biexponential decay of the exciton number with time and find that excitons cool mainly by scattering with acoustic phonons via deformation potential interaction. Transient four-wave-mixing (FWM) studies yield the homogeneous broadening of the A-exciton and the strengths of exciton-exciton and exciton-phonon interactions. These values are comparable to other direct gap semiconductors. The biexciton binding-energy is (5.7 ± 0.3) meV. The energy splitting between A- and B-exciton is obtained with very high accuracy from quantum-beat spectroscopy.
UR - http://www.scopus.com/inward/record.url?scp=0033528933&partnerID=8YFLogxK
U2 - 10.1016/S0921-5107(98)00335-3
DO - 10.1016/S0921-5107(98)00335-3
M3 - Conference article
AN - SCOPUS:0033528933
VL - 59
SP - 141
EP - 146
JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
SN - 0921-5107
IS - 1-3
T2 - 1998 Symposium L: on Nitrides and Related Wide Band Gap Materials (E-MRS Meeting)
Y2 - 16 June 1998 through 19 June 1998
ER -