Details
| Original language | English |
|---|---|
| Pages (from-to) | 799-805 |
| Number of pages | 7 |
| Journal | Energy Procedia |
| Volume | 124 |
| Publication status | Published - Oct 2017 |
Abstract
We analyze the lifetime evolution during permanent deactivation of the boron-oxygen-related defect center (BO defect) in boron-doped, oxygen-rich Czochralski-grown silicon (Cz-Si). In particular, we examine the impact of the samples' states prior to the permanent deactivation process. Samples that were initially fully degraded show a two-stage deactivation process consisting of a fast and a slow deactivation component, which can be fitted by two exponential functions with their respective rate constants. For both components, we find a pronounced increase of the rate constants with illumination intensity. In addition, we observe that the rate constant describing the slow deactivation component of samples deactivated after complete degradation is identical to the rate constant determined on samples, which were deactivated immediately after annealing in darkness. In the latter case, a purely mono-exponential deactivation behavior was observed. Our study clearly demonstrates that the asymptotic deactivation behavior does not depend on the initial state of the lifetime sample. We prove that the same is valid for initially degraded and dark-annealed PERC solar cells. Hence, it is not necessary to first degrade the sample to realize a fast BO deactivation.
Keywords
- Czochralski silicon, boron-oxygen defect, carrier lifetime, permanent deactivation
ASJC Scopus subject areas
- Energy(all)
- General Energy
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In: Energy Procedia, Vol. 124, 10.2017, p. 799-805.
Research output: Contribution to journal › Conference article › Research › peer review
}
TY - JOUR
T1 - Two-stage permanent deactivation of the boron-oxygen-related recombination center in crystalline silicon
AU - Steckenreiter, Verena
AU - Walter, Dominic C.
AU - Schmidt, Jan
N1 - Funding Information: The authors thank Cornelia Marquardt for sample proces sing and Nadine Wehmeier and Dennis Bredemeier for fruitful discussions. This work was funded by the Geram n State of Lower Saox ny and the Geram n Federal iM nistry of Econoim cs and Energy (WiMB ) iw th in the research project “Upgrade iS -PV” under contract oN . 0325877.B
PY - 2017/10
Y1 - 2017/10
N2 - We analyze the lifetime evolution during permanent deactivation of the boron-oxygen-related defect center (BO defect) in boron-doped, oxygen-rich Czochralski-grown silicon (Cz-Si). In particular, we examine the impact of the samples' states prior to the permanent deactivation process. Samples that were initially fully degraded show a two-stage deactivation process consisting of a fast and a slow deactivation component, which can be fitted by two exponential functions with their respective rate constants. For both components, we find a pronounced increase of the rate constants with illumination intensity. In addition, we observe that the rate constant describing the slow deactivation component of samples deactivated after complete degradation is identical to the rate constant determined on samples, which were deactivated immediately after annealing in darkness. In the latter case, a purely mono-exponential deactivation behavior was observed. Our study clearly demonstrates that the asymptotic deactivation behavior does not depend on the initial state of the lifetime sample. We prove that the same is valid for initially degraded and dark-annealed PERC solar cells. Hence, it is not necessary to first degrade the sample to realize a fast BO deactivation.
AB - We analyze the lifetime evolution during permanent deactivation of the boron-oxygen-related defect center (BO defect) in boron-doped, oxygen-rich Czochralski-grown silicon (Cz-Si). In particular, we examine the impact of the samples' states prior to the permanent deactivation process. Samples that were initially fully degraded show a two-stage deactivation process consisting of a fast and a slow deactivation component, which can be fitted by two exponential functions with their respective rate constants. For both components, we find a pronounced increase of the rate constants with illumination intensity. In addition, we observe that the rate constant describing the slow deactivation component of samples deactivated after complete degradation is identical to the rate constant determined on samples, which were deactivated immediately after annealing in darkness. In the latter case, a purely mono-exponential deactivation behavior was observed. Our study clearly demonstrates that the asymptotic deactivation behavior does not depend on the initial state of the lifetime sample. We prove that the same is valid for initially degraded and dark-annealed PERC solar cells. Hence, it is not necessary to first degrade the sample to realize a fast BO deactivation.
KW - Czochralski silicon
KW - boron-oxygen defect
KW - carrier lifetime
KW - permanent deactivation
UR - http://www.scopus.com/inward/record.url?scp=85031946639&partnerID=8YFLogxK
U2 - 10.1016/j.egypro.2017.09.350
DO - 10.1016/j.egypro.2017.09.350
M3 - Conference article
VL - 124
SP - 799
EP - 805
JO - Energy Procedia
JF - Energy Procedia
SN - 1876-6102
ER -