Two-path transport measurements with bias dependence on a triple quantum dot

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Original languageEnglish
Title of host publicationPhysics of Semiconductors
Subtitle of host publicationProceedings of the 31st International Conference on the Physics of Semiconductors, ICPS 2012
Pages213-214
Number of pages2
Publication statusPublished - 31 Dec 2013
Event31st International Conference on the Physics of Semiconductors, ICPS 2012 - Zurich, Switzerland
Duration: 29 Jul 20123 Aug 2012

Publication series

NameAIP Conference Proceedings
Volume1566
ISSN (Print)0094-243X
ISSN (electronic)1551-7616

Abstract

We present transport measurements on a lateral triple quantum dot with a star-like geometry and one lead attached to each dot. [1] The system is studied in a regime close to established quadruple points, where all three dots are in resonance. The specific sample structure allows us to apply two different bias voltages to the two source leads and thus to study the influence between the paths with serial double dots.

Keywords

    Coulomb blockade, electronic transport, triple quantum dots

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Cite this

Two-path transport measurements with bias dependence on a triple quantum dot. / Kotzian, M.; Rogge, M. C.; Haug, R. J.
Physics of Semiconductors: Proceedings of the 31st International Conference on the Physics of Semiconductors, ICPS 2012. 2013. p. 213-214 (AIP Conference Proceedings; Vol. 1566).

Research output: Chapter in book/report/conference proceedingConference contributionResearchpeer review

Kotzian, M, Rogge, MC & Haug, RJ 2013, Two-path transport measurements with bias dependence on a triple quantum dot. in Physics of Semiconductors: Proceedings of the 31st International Conference on the Physics of Semiconductors, ICPS 2012. AIP Conference Proceedings, vol. 1566, pp. 213-214, 31st International Conference on the Physics of Semiconductors, ICPS 2012, Zurich, Switzerland, 29 Jul 2012. https://doi.org/10.1063/1.4848361, https://doi.org/10.15488/2810
Kotzian, M., Rogge, M. C., & Haug, R. J. (2013). Two-path transport measurements with bias dependence on a triple quantum dot. In Physics of Semiconductors: Proceedings of the 31st International Conference on the Physics of Semiconductors, ICPS 2012 (pp. 213-214). (AIP Conference Proceedings; Vol. 1566). https://doi.org/10.1063/1.4848361, https://doi.org/10.15488/2810
Kotzian M, Rogge MC, Haug RJ. Two-path transport measurements with bias dependence on a triple quantum dot. In Physics of Semiconductors: Proceedings of the 31st International Conference on the Physics of Semiconductors, ICPS 2012. 2013. p. 213-214. (AIP Conference Proceedings). doi: 10.1063/1.4848361, 10.15488/2810
Kotzian, M. ; Rogge, M. C. ; Haug, R. J. / Two-path transport measurements with bias dependence on a triple quantum dot. Physics of Semiconductors: Proceedings of the 31st International Conference on the Physics of Semiconductors, ICPS 2012. 2013. pp. 213-214 (AIP Conference Proceedings).
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