Details
| Original language | English |
|---|---|
| Pages (from-to) | 361-368 |
| Number of pages | 8 |
| Journal | Energy Procedia |
| Volume | 55 |
| Early online date | 19 Sept 2014 |
| Publication status | Published - 2014 |
| Event | 4th International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2014 - Hertogenbosch, Netherlands Duration: 25 Mar 2014 → 27 Mar 2014 |
Abstract
We present a module integration process for back junction back contact (BJBC) solar cells featuring point contacts to the back surface field (BSF). We apply two metallization layers. A first metal layer of aluminum is deposited onto the rear side of the cell and carries the current extracted from the polarity with the larger surface area fraction, e.g. from the emitter. The second metallization layer is an Al layer on a transparent substrate that we laser-weld to the small and point-shaped regions of the other polarity, e.g. the BSF region. We use a polymer for insulation between the two metal layers. The Al layer on the substrate also serves for cell interconnection, i.e., it enables module integration. Such an interconnection structure halves the fill factor losses due to the metallization. First proof-of-principle modules show a shunt free interconnection, no laser-induced damage, and an energy conversion efficiency of up to 20.7%.
Keywords
- Al metallization, Back junction back contact, Cell interconnection, Laser micro welding, Module integration, Point contact solar cells
ASJC Scopus subject areas
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In: Energy Procedia, Vol. 55, 2014, p. 361-368.
Research output: Contribution to journal › Conference article › Research › peer review
}
TY - JOUR
T1 - Two-level Metallization and Module Integration of Point-contacted Solar Cells
AU - Schulte-Huxel, Henning
AU - Römer, Udo
AU - Blankemeyer, Susanne
AU - Merkle, Agnes
AU - Larionova, Yevgeniya
AU - Steckenreiter, Verena
AU - Peibst, Robby
AU - Kajari-Schroeder, Sarah
AU - Brendel, Rolf
PY - 2014
Y1 - 2014
N2 - We present a module integration process for back junction back contact (BJBC) solar cells featuring point contacts to the back surface field (BSF). We apply two metallization layers. A first metal layer of aluminum is deposited onto the rear side of the cell and carries the current extracted from the polarity with the larger surface area fraction, e.g. from the emitter. The second metallization layer is an Al layer on a transparent substrate that we laser-weld to the small and point-shaped regions of the other polarity, e.g. the BSF region. We use a polymer for insulation between the two metal layers. The Al layer on the substrate also serves for cell interconnection, i.e., it enables module integration. Such an interconnection structure halves the fill factor losses due to the metallization. First proof-of-principle modules show a shunt free interconnection, no laser-induced damage, and an energy conversion efficiency of up to 20.7%.
AB - We present a module integration process for back junction back contact (BJBC) solar cells featuring point contacts to the back surface field (BSF). We apply two metallization layers. A first metal layer of aluminum is deposited onto the rear side of the cell and carries the current extracted from the polarity with the larger surface area fraction, e.g. from the emitter. The second metallization layer is an Al layer on a transparent substrate that we laser-weld to the small and point-shaped regions of the other polarity, e.g. the BSF region. We use a polymer for insulation between the two metal layers. The Al layer on the substrate also serves for cell interconnection, i.e., it enables module integration. Such an interconnection structure halves the fill factor losses due to the metallization. First proof-of-principle modules show a shunt free interconnection, no laser-induced damage, and an energy conversion efficiency of up to 20.7%.
KW - Al metallization
KW - Back junction back contact
KW - Cell interconnection
KW - Laser micro welding
KW - Module integration
KW - Point contact solar cells
UR - http://www.scopus.com/inward/record.url?scp=84922322172&partnerID=8YFLogxK
U2 - 10.1016/j.egypro.2014.08.104
DO - 10.1016/j.egypro.2014.08.104
M3 - Conference article
AN - SCOPUS:84922322172
VL - 55
SP - 361
EP - 368
JO - Energy Procedia
JF - Energy Procedia
SN - 1876-6102
T2 - 4th International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2014
Y2 - 25 March 2014 through 27 March 2014
ER -