Two-dimensional lattice-mismatched heteroepitaxy of germanium on silicon beyond the critical thickness by introducing a surfactant

Research output: Contribution to journal › Article › Research › peer review

Authors

  • H. J. Osten
  • J. Klatt
  • G. Lippert
  • E. Bugiel
  • S. Hinrich

External Research Organisations

  • Leibniz Institute for High Performance Microelectronics (IHP)
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Details

Original languageEnglish
Pages (from-to)2522-2524
Number of pages3
JournalApplied physics letters
Volume60
Issue number20
Early online date18 May 1992
Publication statusE-pub ahead of print - 18 May 1992
Externally publishedYes

Abstract

Smooth germanium films have been grown on Si(100) surfaces in a two-dimensional fashion by using antimony as a surfactant. Different ways of depositing the surfactant (at the interface between substrate and growing film, after the deposition of a thin Ge layer, and by coevaporation) have been investigated. The grown films, investigated by high-resolution electron microscopy and reflection high-energy electron diffraction, show that the surfactant does not act at the interface. A kinetical approach for the description of surfactant behavior in the growing front is necessary.

ASJC Scopus subject areas

Cite this

Two-dimensional lattice-mismatched heteroepitaxy of germanium on silicon beyond the critical thickness by introducing a surfactant. / Osten, H. J.; Klatt, J.; Lippert, G. et al.
In: Applied physics letters, Vol. 60, No. 20, 18.05.1992, p. 2522-2524.

Research output: Contribution to journal › Article › Research › peer review

Osten, H. J., Klatt, J., Lippert, G., Bugiel, E., & Hinrich, S. (1992). Two-dimensional lattice-mismatched heteroepitaxy of germanium on silicon beyond the critical thickness by introducing a surfactant. Applied physics letters, 60(20), 2522-2524. Advance online publication. https://doi.org/10.1063/1.106926
Osten HJ, Klatt J, Lippert G, Bugiel E, Hinrich S. Two-dimensional lattice-mismatched heteroepitaxy of germanium on silicon beyond the critical thickness by introducing a surfactant. Applied physics letters. 1992 May 18;60(20):2522-2524. Epub 1992 May 18. doi: 10.1063/1.106926
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