Details
| Original language | English |
|---|---|
| Pages (from-to) | 1506-1511 |
| Number of pages | 6 |
| Journal | Semiconductor Science and Technology |
| Volume | 11 |
| Issue number | 11 SUPPL. S |
| Publication status | Published - Nov 1996 |
| Externally published | Yes |
Abstract
Tunnelling through single and coupled GaAs quantum dots is used to analyse the electronic properties of artificial atoms and molecules. In addition we demonstrate that a strongly localized dot can be used as a spectrometer with high spatial and energy resolution for the determination of the local density of states in a disordered semiconductor.
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Electrical and Electronic Engineering
- Materials Science(all)
- Materials Chemistry
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In: Semiconductor Science and Technology, Vol. 11, No. 11 SUPPL. S, 11.1996, p. 1506-1511.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Tunnelling through quantum dots
AU - Blick, R. H.
AU - Schmidt, T.
AU - Haug, R.
AU - Von Klitzing, K.
PY - 1996/11
Y1 - 1996/11
N2 - Tunnelling through single and coupled GaAs quantum dots is used to analyse the electronic properties of artificial atoms and molecules. In addition we demonstrate that a strongly localized dot can be used as a spectrometer with high spatial and energy resolution for the determination of the local density of states in a disordered semiconductor.
AB - Tunnelling through single and coupled GaAs quantum dots is used to analyse the electronic properties of artificial atoms and molecules. In addition we demonstrate that a strongly localized dot can be used as a spectrometer with high spatial and energy resolution for the determination of the local density of states in a disordered semiconductor.
UR - http://www.scopus.com/inward/record.url?scp=0030285005&partnerID=8YFLogxK
U2 - 10.1088/0268-1242/11/11S/009
DO - 10.1088/0268-1242/11/11S/009
M3 - Article
AN - SCOPUS:0030285005
VL - 11
SP - 1506
EP - 1511
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
SN - 0268-1242
IS - 11 SUPPL. S
ER -