Details
| Original language | English |
|---|---|
| Pages (from-to) | 17820-17826 |
| Number of pages | 7 |
| Journal | Physical Review B |
| Volume | 51 |
| Issue number | 24 |
| Publication status | Published - 1 Jan 1995 |
| Externally published | Yes |
Abstract
We developed a method to study the potential distribution in a two-dimensional electron gas in a magnetic field with a nonequilibrium between edge channels and the bulk. The effective resistance determined as a function of dc bias shows that the coupling between the edge channels and the bulk is due to tunneling across the incompressible strips with integer filling factors. An additional dc bias changes both the width of the strip and the path for tunneling, resulting in a diodelike characteristic. Negative differential resistance was observed when two incompressible strips are developed at the edge.
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Condensed Matter Physics
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In: Physical Review B, Vol. 51, No. 24, 01.01.1995, p. 17820-17826.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Tunneling between edge channels and the bulk of a two-dimensional electron gas
AU - Zhitenev, N. B.
AU - Haug, R. J.
AU - Klitzing, K. V.
AU - Eberl, K.
PY - 1995/1/1
Y1 - 1995/1/1
N2 - We developed a method to study the potential distribution in a two-dimensional electron gas in a magnetic field with a nonequilibrium between edge channels and the bulk. The effective resistance determined as a function of dc bias shows that the coupling between the edge channels and the bulk is due to tunneling across the incompressible strips with integer filling factors. An additional dc bias changes both the width of the strip and the path for tunneling, resulting in a diodelike characteristic. Negative differential resistance was observed when two incompressible strips are developed at the edge.
AB - We developed a method to study the potential distribution in a two-dimensional electron gas in a magnetic field with a nonequilibrium between edge channels and the bulk. The effective resistance determined as a function of dc bias shows that the coupling between the edge channels and the bulk is due to tunneling across the incompressible strips with integer filling factors. An additional dc bias changes both the width of the strip and the path for tunneling, resulting in a diodelike characteristic. Negative differential resistance was observed when two incompressible strips are developed at the edge.
UR - http://www.scopus.com/inward/record.url?scp=0008624773&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.51.17820
DO - 10.1103/PhysRevB.51.17820
M3 - Article
AN - SCOPUS:0008624773
VL - 51
SP - 17820
EP - 17826
JO - Physical Review B
JF - Physical Review B
SN - 0163-1829
IS - 24
ER -