Details
| Original language | English |
|---|---|
| Pages (from-to) | 420-422 |
| Number of pages | 3 |
| Journal | Physica B: Physics of Condensed Matter |
| Volume | 211 |
| Issue number | 1-4 |
| Publication status | Published - 1 May 1995 |
| Externally published | Yes |
Abstract
We have developed a new method to study the non equilibrium between edge channels and the bulk of a two-dimensional electron gas. The variation of the effective resistance with applied DC bias clearly shows that the coupling between the edge channels and the bulk is due to tunneling across the incompressible strips. An additional DC bias changes both the width of the strip and the path for tunneling resulting in a diode-like characteristic.
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Electrical and Electronic Engineering
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In: Physica B: Physics of Condensed Matter, Vol. 211, No. 1-4, 01.05.1995, p. 420-422.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Tunneling across incompressible strip at the edge
AU - Zhitenev, N. B.
AU - Haug, R. J.
AU - Klitzing, K. v.
AU - Eberl, K.
PY - 1995/5/1
Y1 - 1995/5/1
N2 - We have developed a new method to study the non equilibrium between edge channels and the bulk of a two-dimensional electron gas. The variation of the effective resistance with applied DC bias clearly shows that the coupling between the edge channels and the bulk is due to tunneling across the incompressible strips. An additional DC bias changes both the width of the strip and the path for tunneling resulting in a diode-like characteristic.
AB - We have developed a new method to study the non equilibrium between edge channels and the bulk of a two-dimensional electron gas. The variation of the effective resistance with applied DC bias clearly shows that the coupling between the edge channels and the bulk is due to tunneling across the incompressible strips. An additional DC bias changes both the width of the strip and the path for tunneling resulting in a diode-like characteristic.
UR - http://www.scopus.com/inward/record.url?scp=58149324596&partnerID=8YFLogxK
U2 - 10.1016/0921-4526(94)01083-D
DO - 10.1016/0921-4526(94)01083-D
M3 - Article
AN - SCOPUS:58149324596
VL - 211
SP - 420
EP - 422
JO - Physica B: Physics of Condensed Matter
JF - Physica B: Physics of Condensed Matter
SN - 0921-4526
IS - 1-4
ER -