Details
| Original language | English |
|---|---|
| Pages (from-to) | 1209-1211 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 82 |
| Issue number | 8 |
| Publication status | Published - Jan 2003 |
Abstract
A study was conducted on the onset voltage of resonant tunneling through indium arsenide (InAs) quantum dots by growth parameters. It was found that the onset voltage of the first step decreased from 200 mV to 0 with increasing InAs coverage. The results were confirmed by atomic force micrographs and photoluminescence experiments on reference samples.
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Physics and Astronomy (miscellaneous)
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In: Applied Physics Letters, Vol. 82, No. 8, 01.2003, p. 1209-1211.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Tuning the onset voltage of resonant tunneling through InAs quantum dots by growth parameters
AU - Hapke-Wurst, I.
AU - Zeitler, U.
AU - Keyser, U. F.
AU - Haug, R. J.
AU - Pierz, K.
AU - Ma, Z.
PY - 2003/1
Y1 - 2003/1
N2 - A study was conducted on the onset voltage of resonant tunneling through indium arsenide (InAs) quantum dots by growth parameters. It was found that the onset voltage of the first step decreased from 200 mV to 0 with increasing InAs coverage. The results were confirmed by atomic force micrographs and photoluminescence experiments on reference samples.
AB - A study was conducted on the onset voltage of resonant tunneling through indium arsenide (InAs) quantum dots by growth parameters. It was found that the onset voltage of the first step decreased from 200 mV to 0 with increasing InAs coverage. The results were confirmed by atomic force micrographs and photoluminescence experiments on reference samples.
UR - http://www.scopus.com/inward/record.url?scp=0037463243&partnerID=8YFLogxK
U2 - 10.1063/1.1555712
DO - 10.1063/1.1555712
M3 - Article
AN - SCOPUS:0037463243
VL - 82
SP - 1209
EP - 1211
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 8
ER -