Tuning dielectric properties of epitaxial lanthanide oxides on silicon

Research output: Contribution to journalConference articleResearchpeer review

Authors

  • H. J. Osten
  • D. Schwendt
  • A. R. Chaudhuri
  • A. Fissel
  • P. Shekhter
  • M. Eizenberg

External Research Organisations

  • Technion-Israel Institute of Technology
View graph of relations

Details

Original languageEnglish
Pages (from-to)3-9
Number of pages7
JournalECS Transactions
Volume61
Issue number2
Publication statusPublished - 2014
Event6th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 225th ECS Meeting - Orlando, United States
Duration: 11 May 201415 May 2014

Abstract

The dielectric properties of thin crystalline oxides grown on silicon are sensitive to small variations in structure and symmetry. Here, we report about different investigations on strain-induced effects on dielectric properties. First, we report on the dependence of the dielectric constant on layer thickness for epitaxial Gd2O3 on Si(111). The K-value strongly decreases with increasing layer thickness and reaches the bulk value at around 8 nm. Controlling the oxide composition in ternary (Gd1-xNdx)2O3 thin films enables us to tune the lattice mismatch to silicon, and thus the straininduced variation in the dielectric constants. We show that solely tetragonal distortion of the cubic lattice is not sufficient to explain the huge enhancement in K-values; more severe strain induced structural phase deformations take place. Further, dielectric properties of epitaxial oxide thin films have been found to improve significantly by incorporation of suitable dopants. We observe substantial reduction of the leakage current density in nitrogendoped Gd2O3 layers indicating that nitrogen doping can be an effective route to eliminate the adverse effects of the oxygen vacancy induced defects in the oxide layers.

ASJC Scopus subject areas

Cite this

Tuning dielectric properties of epitaxial lanthanide oxides on silicon. / Osten, H. J.; Schwendt, D.; Chaudhuri, A. R. et al.
In: ECS Transactions, Vol. 61, No. 2, 2014, p. 3-9.

Research output: Contribution to journalConference articleResearchpeer review

Osten, HJ, Schwendt, D, Chaudhuri, AR, Fissel, A, Shekhter, P & Eizenberg, M 2014, 'Tuning dielectric properties of epitaxial lanthanide oxides on silicon', ECS Transactions, vol. 61, no. 2, pp. 3-9. https://doi.org/10.1149/06102.0003ecst
Osten, H. J., Schwendt, D., Chaudhuri, A. R., Fissel, A., Shekhter, P., & Eizenberg, M. (2014). Tuning dielectric properties of epitaxial lanthanide oxides on silicon. ECS Transactions, 61(2), 3-9. https://doi.org/10.1149/06102.0003ecst
Osten HJ, Schwendt D, Chaudhuri AR, Fissel A, Shekhter P, Eizenberg M. Tuning dielectric properties of epitaxial lanthanide oxides on silicon. ECS Transactions. 2014;61(2):3-9. doi: 10.1149/06102.0003ecst
Osten, H. J. ; Schwendt, D. ; Chaudhuri, A. R. et al. / Tuning dielectric properties of epitaxial lanthanide oxides on silicon. In: ECS Transactions. 2014 ; Vol. 61, No. 2. pp. 3-9.
Download
@article{5bcac004b88d455d97f3d0d8f43f8b06,
title = "Tuning dielectric properties of epitaxial lanthanide oxides on silicon",
abstract = "The dielectric properties of thin crystalline oxides grown on silicon are sensitive to small variations in structure and symmetry. Here, we report about different investigations on strain-induced effects on dielectric properties. First, we report on the dependence of the dielectric constant on layer thickness for epitaxial Gd2O3 on Si(111). The K-value strongly decreases with increasing layer thickness and reaches the bulk value at around 8 nm. Controlling the oxide composition in ternary (Gd1-xNdx)2O3 thin films enables us to tune the lattice mismatch to silicon, and thus the straininduced variation in the dielectric constants. We show that solely tetragonal distortion of the cubic lattice is not sufficient to explain the huge enhancement in K-values; more severe strain induced structural phase deformations take place. Further, dielectric properties of epitaxial oxide thin films have been found to improve significantly by incorporation of suitable dopants. We observe substantial reduction of the leakage current density in nitrogendoped Gd2O3 layers indicating that nitrogen doping can be an effective route to eliminate the adverse effects of the oxygen vacancy induced defects in the oxide layers.",
author = "Osten, {H. J.} and D. Schwendt and Chaudhuri, {A. R.} and A. Fissel and P. Shekhter and M. Eizenberg",
year = "2014",
doi = "10.1149/06102.0003ecst",
language = "English",
volume = "61",
pages = "3--9",
number = "2",
note = "6th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 225th ECS Meeting ; Conference date: 11-05-2014 Through 15-05-2014",

}

Download

TY - JOUR

T1 - Tuning dielectric properties of epitaxial lanthanide oxides on silicon

AU - Osten, H. J.

AU - Schwendt, D.

AU - Chaudhuri, A. R.

AU - Fissel, A.

AU - Shekhter, P.

AU - Eizenberg, M.

PY - 2014

Y1 - 2014

N2 - The dielectric properties of thin crystalline oxides grown on silicon are sensitive to small variations in structure and symmetry. Here, we report about different investigations on strain-induced effects on dielectric properties. First, we report on the dependence of the dielectric constant on layer thickness for epitaxial Gd2O3 on Si(111). The K-value strongly decreases with increasing layer thickness and reaches the bulk value at around 8 nm. Controlling the oxide composition in ternary (Gd1-xNdx)2O3 thin films enables us to tune the lattice mismatch to silicon, and thus the straininduced variation in the dielectric constants. We show that solely tetragonal distortion of the cubic lattice is not sufficient to explain the huge enhancement in K-values; more severe strain induced structural phase deformations take place. Further, dielectric properties of epitaxial oxide thin films have been found to improve significantly by incorporation of suitable dopants. We observe substantial reduction of the leakage current density in nitrogendoped Gd2O3 layers indicating that nitrogen doping can be an effective route to eliminate the adverse effects of the oxygen vacancy induced defects in the oxide layers.

AB - The dielectric properties of thin crystalline oxides grown on silicon are sensitive to small variations in structure and symmetry. Here, we report about different investigations on strain-induced effects on dielectric properties. First, we report on the dependence of the dielectric constant on layer thickness for epitaxial Gd2O3 on Si(111). The K-value strongly decreases with increasing layer thickness and reaches the bulk value at around 8 nm. Controlling the oxide composition in ternary (Gd1-xNdx)2O3 thin films enables us to tune the lattice mismatch to silicon, and thus the straininduced variation in the dielectric constants. We show that solely tetragonal distortion of the cubic lattice is not sufficient to explain the huge enhancement in K-values; more severe strain induced structural phase deformations take place. Further, dielectric properties of epitaxial oxide thin films have been found to improve significantly by incorporation of suitable dopants. We observe substantial reduction of the leakage current density in nitrogendoped Gd2O3 layers indicating that nitrogen doping can be an effective route to eliminate the adverse effects of the oxygen vacancy induced defects in the oxide layers.

UR - http://www.scopus.com/inward/record.url?scp=84925044012&partnerID=8YFLogxK

U2 - 10.1149/06102.0003ecst

DO - 10.1149/06102.0003ecst

M3 - Conference article

AN - SCOPUS:84925044012

VL - 61

SP - 3

EP - 9

JO - ECS Transactions

JF - ECS Transactions

SN - 1938-5862

IS - 2

T2 - 6th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 225th ECS Meeting

Y2 - 11 May 2014 through 15 May 2014

ER -