Tunable topological bandgaps and frequencies in a pre-stressed soft phononic crystal

Research output: Contribution to journalArticleResearchpeer review

Authors

  • B. H. Nguyen
  • Xiaoying Zhuang
  • Harold S. Park
  • Timon Rabczuk

Research Organisations

External Research Organisations

  • Ton Duc Thang University
  • Boston University (BU)
  • Bauhaus-Universität Weimar
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Details

Original languageEnglish
Article number095106
JournalJournal of Applied Physics
Volume125
Issue number9
Publication statusPublished - 7 Mar 2019

Abstract

Topological insulators (TIs) have recently received significant attention due to the promise of lossless transport of various types of energy. Despite this interest, one outstanding issue is that the topological bandgap and the frequencies that are topologically permitted are typically fixed once the topological structure has been designed and fabricated. Therefore, an open and unresolved question concerns the ability to actively tune both the bandgap magnitude, as well as the frequencies, for which the energy is topologically protected. In this work, we report a mechanically tunable phononic TI using an acoustic analog of the quantum valley Hall effect. We propose a phononic crystal comprised of a soft, hyperelastic material where the phononic band structure is modulated through large deformation of the structure. In doing so, space-inversion symmetry can be broken, which leads to a phase transition between two topologically-contrasted states and the emergence of topologically-protected interface modes according to bulk-edge correspondence. We further demonstrate the robustness of this topological protection of the edge state along the interface, which demonstrates that mechanical deformation can be used to effectively tailor and tune the topological properties of elastic structures.

ASJC Scopus subject areas

Cite this

Tunable topological bandgaps and frequencies in a pre-stressed soft phononic crystal. / Nguyen, B. H.; Zhuang, Xiaoying; Park, Harold S. et al.
In: Journal of Applied Physics, Vol. 125, No. 9, 095106, 07.03.2019.

Research output: Contribution to journalArticleResearchpeer review

Nguyen BH, Zhuang X, Park HS, Rabczuk T. Tunable topological bandgaps and frequencies in a pre-stressed soft phononic crystal. Journal of Applied Physics. 2019 Mar 7;125(9):095106. doi: 10.1063/1.5066088
Nguyen, B. H. ; Zhuang, Xiaoying ; Park, Harold S. et al. / Tunable topological bandgaps and frequencies in a pre-stressed soft phononic crystal. In: Journal of Applied Physics. 2019 ; Vol. 125, No. 9.
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abstract = "Topological insulators (TIs) have recently received significant attention due to the promise of lossless transport of various types of energy. Despite this interest, one outstanding issue is that the topological bandgap and the frequencies that are topologically permitted are typically fixed once the topological structure has been designed and fabricated. Therefore, an open and unresolved question concerns the ability to actively tune both the bandgap magnitude, as well as the frequencies, for which the energy is topologically protected. In this work, we report a mechanically tunable phononic TI using an acoustic analog of the quantum valley Hall effect. We propose a phononic crystal comprised of a soft, hyperelastic material where the phononic band structure is modulated through large deformation of the structure. In doing so, space-inversion symmetry can be broken, which leads to a phase transition between two topologically-contrasted states and the emergence of topologically-protected interface modes according to bulk-edge correspondence. We further demonstrate the robustness of this topological protection of the edge state along the interface, which demonstrates that mechanical deformation can be used to effectively tailor and tune the topological properties of elastic structures.",
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N1 - Funding information: B. H. Nguyen and X. Zhuang owe gratitude to the sponsorship from the Sofja Kovalevskaja Programme of Alexander von Humboldt Foundation. H.S.P. acknowledges the support of the Army Research Office (ARO) (Grant No. W911NF-18-1-0380).

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