Details
| Original language | English |
|---|---|
| Title of host publication | 35th IEEE Photovoltaic Specialists Conference Honolulu, HI, June 20-25, 2010 |
| Subtitle of host publication | Conference Proceedings |
| Pages | 443-446 |
| Number of pages | 4 |
| Publication status | Published - 2010 |
| Event | 35th IEEE Photovoltaic Specialists Conference, PVSC 2010: PVSC 2010 - Honolulu, HI, United States Duration: 20 Jun 2010 → 25 Jun 2010 Conference number: 35 |
Publication series
| Name | Conference Record of the IEEE Photovoltaic Specialists Conference |
|---|---|
| ISSN (Print) | 0160-8371 |
Abstract
In this paper we show experimental results that indicate that trapping-related increase of the apparent carrier lifetime can be directly accompanied by a decreased recombination lifetime. This effect cannot be described with the traditionally used trapping model of Hornbeck and Haynes [1,2,3] (H&H). In order to obtain a physically consistent theoretical description of the observed correlation between trapping and recombination we use the Shockley, Read [4] and Hall [5] (SRH) formalism. We assume trap states with non-zero capture cross sections for majority carriers, which may nevertheless be several orders of magnitude smaller than the minority carrier capture cross sections. In this way we define a Recombination-Active Trap state (RAT) that allows a simultaneous description of trapping effects and a reduction of the recombination lifetime in low level injection.
ASJC Scopus subject areas
- Engineering(all)
- Control and Systems Engineering
- Engineering(all)
- Industrial and Manufacturing Engineering
- Engineering(all)
- Electrical and Electronic Engineering
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35th IEEE Photovoltaic Specialists Conference Honolulu, HI, June 20-25, 2010: Conference Proceedings. 2010. p. 443-446 5616743 (Conference Record of the IEEE Photovoltaic Specialists Conference).
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
}
TY - GEN
T1 - Trapping-related recombination of charge carriers in silicon
AU - Gogolin, R.
AU - Harder, N. P.
AU - Brendel, R.
N1 - Conference code: 35
PY - 2010
Y1 - 2010
N2 - In this paper we show experimental results that indicate that trapping-related increase of the apparent carrier lifetime can be directly accompanied by a decreased recombination lifetime. This effect cannot be described with the traditionally used trapping model of Hornbeck and Haynes [1,2,3] (H&H). In order to obtain a physically consistent theoretical description of the observed correlation between trapping and recombination we use the Shockley, Read [4] and Hall [5] (SRH) formalism. We assume trap states with non-zero capture cross sections for majority carriers, which may nevertheless be several orders of magnitude smaller than the minority carrier capture cross sections. In this way we define a Recombination-Active Trap state (RAT) that allows a simultaneous description of trapping effects and a reduction of the recombination lifetime in low level injection.
AB - In this paper we show experimental results that indicate that trapping-related increase of the apparent carrier lifetime can be directly accompanied by a decreased recombination lifetime. This effect cannot be described with the traditionally used trapping model of Hornbeck and Haynes [1,2,3] (H&H). In order to obtain a physically consistent theoretical description of the observed correlation between trapping and recombination we use the Shockley, Read [4] and Hall [5] (SRH) formalism. We assume trap states with non-zero capture cross sections for majority carriers, which may nevertheless be several orders of magnitude smaller than the minority carrier capture cross sections. In this way we define a Recombination-Active Trap state (RAT) that allows a simultaneous description of trapping effects and a reduction of the recombination lifetime in low level injection.
UR - http://www.scopus.com/inward/record.url?scp=78650147130&partnerID=8YFLogxK
U2 - 10.1109/PVSC.2010.5616743
DO - 10.1109/PVSC.2010.5616743
M3 - Conference contribution
AN - SCOPUS:78650147130
SN - 9781424458912
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
SP - 443
EP - 446
BT - 35th IEEE Photovoltaic Specialists Conference Honolulu, HI, June 20-25, 2010
T2 - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Y2 - 20 June 2010 through 25 June 2010
ER -