Details
| Original language | English |
|---|---|
| Title of host publication | Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 |
| Publisher | IEEE Computer Society |
| Pages | 932-935 |
| Number of pages | 4 |
| ISBN (print) | 1424400163, 9781424400164, 1-4244-0017-1 |
| Publication status | Published - 2006 |
| Externally published | Yes |
| Event | 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion (WCPEC-4) - Waikoloa, HI, United States Duration: 7 May 2006 → 12 May 2006 Conference number: 4 |
Abstract
We apply a novel an imaging technique for nonrecombination active minority-carrier trapping centres in silicon wafers based on lock-in infrared thermography. Measurements on Czochralski silicon wafers show that the trap density is highly inhomogenous and correlates with oxygen-induced striation patterns. A direct comparison of the trap density image with the corresponding recombination lifetime mapping reveals an anticorrelation of the two quantities. The application of the ITM technique to block-cast multicrystalline silicon wafers shows that the distribution of the trapping centres correlates with the dislocation density. Moreover, we find that areas with increased dislocation density often degrade during phosphorus gettering treatment. Finally, we demonstrate that one single spatially resolved measurement of the infrared emission signal of as-delivered multicrystalline silicon without surface passivation layers reveals already poorly-getterable areas, which decrease the solar cell efficiency. Hence, trap density imaging is a useful new instrument for assessing the efficiency potential of asdelivered mc-Si wafers.
ASJC Scopus subject areas
- Energy(all)
- Renewable Energy, Sustainability and the Environment
- Engineering(all)
- Electrical and Electronic Engineering
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Materials Science(all)
- Materials Chemistry
Sustainable Development Goals
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Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4. IEEE Computer Society, 2006. p. 932-935 4059782.
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
}
TY - GEN
T1 - Trap density imaging of silicon wafers using a lock-in infrared camera technique
AU - Pohl, Peter
AU - Schmidt, Jan
AU - Bothe, Karsten
AU - Brendel, Rolf
N1 - Conference code: 4
PY - 2006
Y1 - 2006
N2 - We apply a novel an imaging technique for nonrecombination active minority-carrier trapping centres in silicon wafers based on lock-in infrared thermography. Measurements on Czochralski silicon wafers show that the trap density is highly inhomogenous and correlates with oxygen-induced striation patterns. A direct comparison of the trap density image with the corresponding recombination lifetime mapping reveals an anticorrelation of the two quantities. The application of the ITM technique to block-cast multicrystalline silicon wafers shows that the distribution of the trapping centres correlates with the dislocation density. Moreover, we find that areas with increased dislocation density often degrade during phosphorus gettering treatment. Finally, we demonstrate that one single spatially resolved measurement of the infrared emission signal of as-delivered multicrystalline silicon without surface passivation layers reveals already poorly-getterable areas, which decrease the solar cell efficiency. Hence, trap density imaging is a useful new instrument for assessing the efficiency potential of asdelivered mc-Si wafers.
AB - We apply a novel an imaging technique for nonrecombination active minority-carrier trapping centres in silicon wafers based on lock-in infrared thermography. Measurements on Czochralski silicon wafers show that the trap density is highly inhomogenous and correlates with oxygen-induced striation patterns. A direct comparison of the trap density image with the corresponding recombination lifetime mapping reveals an anticorrelation of the two quantities. The application of the ITM technique to block-cast multicrystalline silicon wafers shows that the distribution of the trapping centres correlates with the dislocation density. Moreover, we find that areas with increased dislocation density often degrade during phosphorus gettering treatment. Finally, we demonstrate that one single spatially resolved measurement of the infrared emission signal of as-delivered multicrystalline silicon without surface passivation layers reveals already poorly-getterable areas, which decrease the solar cell efficiency. Hence, trap density imaging is a useful new instrument for assessing the efficiency potential of asdelivered mc-Si wafers.
UR - http://www.scopus.com/inward/record.url?scp=41749125200&partnerID=8YFLogxK
U2 - 10.1109/WCPEC.2006.279609
DO - 10.1109/WCPEC.2006.279609
M3 - Conference contribution
AN - SCOPUS:41749125200
SN - 1424400163
SN - 9781424400164
SN - 1-4244-0017-1
SP - 932
EP - 935
BT - Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
PB - IEEE Computer Society
T2 - 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion (WCPEC-4)
Y2 - 7 May 2006 through 12 May 2006
ER -