Details
| Original language | English |
|---|---|
| Pages (from-to) | 207-212 |
| Number of pages | 6 |
| Journal | Physica B: Physics of Condensed Matter |
| Volume | 212 |
| Issue number | 3 |
| Publication status | Published - 2 Aug 1995 |
| Externally published | Yes |
Abstract
Single-electron tunneling through quantum dots is determined by the interplay between charging effects and the discrete level spectrum originating from the three-dimensional confinement. This interplay is studied in semiconducting AlGaAs/GaAs heterostructures in lateral and vertical tunneling relative to the surface of the device. Single-electron tunneling through a single and two coupled quantum dots is presented.
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Electrical and Electronic Engineering
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In: Physica B: Physics of Condensed Matter, Vol. 212, No. 3, 02.08.1995, p. 207-212.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Transport spectroscopy of single and coupled quantum-dot systems
AU - Haug, R. J.
AU - Blick, R. H.
AU - Schmidt, T.
N1 - Funding information: Discussions with and contributions of M. Tewordt, D. Pfannkuche, V. Falko, K. v. Klitzing, K. Eberl, A. F/Srster and H. Liith are gratefully acknowledged. Part of this work has been supported by the Bundesministerium fiir Forschung und Technologie.
PY - 1995/8/2
Y1 - 1995/8/2
N2 - Single-electron tunneling through quantum dots is determined by the interplay between charging effects and the discrete level spectrum originating from the three-dimensional confinement. This interplay is studied in semiconducting AlGaAs/GaAs heterostructures in lateral and vertical tunneling relative to the surface of the device. Single-electron tunneling through a single and two coupled quantum dots is presented.
AB - Single-electron tunneling through quantum dots is determined by the interplay between charging effects and the discrete level spectrum originating from the three-dimensional confinement. This interplay is studied in semiconducting AlGaAs/GaAs heterostructures in lateral and vertical tunneling relative to the surface of the device. Single-electron tunneling through a single and two coupled quantum dots is presented.
UR - http://www.scopus.com/inward/record.url?scp=0029633085&partnerID=8YFLogxK
U2 - 10.1016/0921-4526(95)00033-6
DO - 10.1016/0921-4526(95)00033-6
M3 - Article
AN - SCOPUS:0029633085
VL - 212
SP - 207
EP - 212
JO - Physica B: Physics of Condensed Matter
JF - Physica B: Physics of Condensed Matter
SN - 0921-4526
IS - 3
ER -