Transport measurements on twisted graphene monolayers

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Original languageEnglish
Title of host publicationPhysics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30
Pages753-754
Number of pages2
Publication statusPublished - 1 Dec 2011
Event30th International Conference on the Physics of Semiconductors, ICPS-30 - Seoul, Korea, Republic of
Duration: 25 Jul 201030 Jul 2010

Publication series

NameAIP Conference Proceedings
Volume1399
ISSN (Print)0094-243X
ISSN (electronic)1551-7616

Abstract

Twisted graphene monolayers form a sample of two closely spaced two dimensional systems. We have performed transport measurements on such decoupled graphene layers being jointly contacted and conducting in parallel to investigate the properties of charge carriers in both layers. Varying the charge carrier concentration and applying perpendicular magnetic field, the electric field effect, Shubnikov-de Haas oscillations and plateaus in the Hall resistance are observed. At the charge neutrality point, the resistance decreases by 15 percent with increasing temperature from 1.5 to 50 Kelvin.

Keywords

    decoupled monolayers, graphene, magnetotransport

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Cite this

Transport measurements on twisted graphene monolayers. / Schmidt, H.; Lüdtke, T.; Barthold, P. et al.
Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30. 2011. p. 753-754 (AIP Conference Proceedings; Vol. 1399).

Research output: Chapter in book/report/conference proceedingConference contributionResearchpeer review

Schmidt, H, Lüdtke, T, Barthold, P & Haug, RJ 2011, Transport measurements on twisted graphene monolayers. in Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30. AIP Conference Proceedings, vol. 1399, pp. 753-754, 30th International Conference on the Physics of Semiconductors, ICPS-30, Seoul, Korea, Republic of, 25 Jul 2010. https://doi.org/10.1063/1.3666595
Schmidt, H., Lüdtke, T., Barthold, P., & Haug, R. J. (2011). Transport measurements on twisted graphene monolayers. In Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30 (pp. 753-754). (AIP Conference Proceedings; Vol. 1399). https://doi.org/10.1063/1.3666595
Schmidt H, Lüdtke T, Barthold P, Haug RJ. Transport measurements on twisted graphene monolayers. In Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30. 2011. p. 753-754. (AIP Conference Proceedings). doi: 10.1063/1.3666595
Schmidt, H. ; Lüdtke, T. ; Barthold, P. et al. / Transport measurements on twisted graphene monolayers. Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30. 2011. pp. 753-754 (AIP Conference Proceedings).
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@inproceedings{c72a5a8d485b4de7b4f788d4de9b2f1a,
title = "Transport measurements on twisted graphene monolayers",
abstract = "Twisted graphene monolayers form a sample of two closely spaced two dimensional systems. We have performed transport measurements on such decoupled graphene layers being jointly contacted and conducting in parallel to investigate the properties of charge carriers in both layers. Varying the charge carrier concentration and applying perpendicular magnetic field, the electric field effect, Shubnikov-de Haas oscillations and plateaus in the Hall resistance are observed. At the charge neutrality point, the resistance decreases by 15 percent with increasing temperature from 1.5 to 50 Kelvin.",
keywords = "decoupled monolayers, graphene, magnetotransport",
author = "H. Schmidt and T. L{\"u}dtke and P. Barthold and Haug, {R. J.}",
year = "2011",
month = dec,
day = "1",
doi = "10.1063/1.3666595",
language = "English",
isbn = "9780735410022",
series = "AIP Conference Proceedings",
pages = "753--754",
booktitle = "Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30",
note = "30th International Conference on the Physics of Semiconductors, ICPS-30 ; Conference date: 25-07-2010 Through 30-07-2010",

}

Download

TY - GEN

T1 - Transport measurements on twisted graphene monolayers

AU - Schmidt, H.

AU - Lüdtke, T.

AU - Barthold, P.

AU - Haug, R. J.

PY - 2011/12/1

Y1 - 2011/12/1

N2 - Twisted graphene monolayers form a sample of two closely spaced two dimensional systems. We have performed transport measurements on such decoupled graphene layers being jointly contacted and conducting in parallel to investigate the properties of charge carriers in both layers. Varying the charge carrier concentration and applying perpendicular magnetic field, the electric field effect, Shubnikov-de Haas oscillations and plateaus in the Hall resistance are observed. At the charge neutrality point, the resistance decreases by 15 percent with increasing temperature from 1.5 to 50 Kelvin.

AB - Twisted graphene monolayers form a sample of two closely spaced two dimensional systems. We have performed transport measurements on such decoupled graphene layers being jointly contacted and conducting in parallel to investigate the properties of charge carriers in both layers. Varying the charge carrier concentration and applying perpendicular magnetic field, the electric field effect, Shubnikov-de Haas oscillations and plateaus in the Hall resistance are observed. At the charge neutrality point, the resistance decreases by 15 percent with increasing temperature from 1.5 to 50 Kelvin.

KW - decoupled monolayers

KW - graphene

KW - magnetotransport

UR - http://www.scopus.com/inward/record.url?scp=84855484462&partnerID=8YFLogxK

U2 - 10.1063/1.3666595

DO - 10.1063/1.3666595

M3 - Conference contribution

AN - SCOPUS:84855484462

SN - 9780735410022

T3 - AIP Conference Proceedings

SP - 753

EP - 754

BT - Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30

T2 - 30th International Conference on the Physics of Semiconductors, ICPS-30

Y2 - 25 July 2010 through 30 July 2010

ER -

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