Details
| Original language | English |
|---|---|
| Pages (from-to) | 757-760 |
| Number of pages | 4 |
| Journal | Physica E: Low-Dimensional Systems and Nanostructures |
| Volume | 13 |
| Issue number | 2-4 |
| Publication status | Published - Mar 2002 |
Abstract
Magneto-tunnelling for holes was studied in SiGe/Si/SiGe heterostructures with Ge quantum dots of the 'hut cluster' type in the middle of the Si-layer. At temperatures below 10 K two different transport regimes can be distinguished in the current-voltage characteristic. In high magnetic fields a dramatic instability develops in the non-linear current-voltage characteristics. The influence of different layer structures is discussed.
Keywords
- Germanium, Self-assembled quantum dots, Silicon-Germanium
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Atomic and Molecular Physics, and Optics
- Physics and Astronomy(all)
- Condensed Matter Physics
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In: Physica E: Low-Dimensional Systems and Nanostructures, Vol. 13, No. 2-4, 03.2002, p. 757-760.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Transport measurements of valence band holes in p-type SiGe quantum well structure containing Ge quantum dots
AU - Haendel, K. M.
AU - Lenz, C.
AU - Denker, U.
AU - Schmidt, O. G.
AU - Eberl, K.
AU - Haug, R. J.
PY - 2002/3
Y1 - 2002/3
N2 - Magneto-tunnelling for holes was studied in SiGe/Si/SiGe heterostructures with Ge quantum dots of the 'hut cluster' type in the middle of the Si-layer. At temperatures below 10 K two different transport regimes can be distinguished in the current-voltage characteristic. In high magnetic fields a dramatic instability develops in the non-linear current-voltage characteristics. The influence of different layer structures is discussed.
AB - Magneto-tunnelling for holes was studied in SiGe/Si/SiGe heterostructures with Ge quantum dots of the 'hut cluster' type in the middle of the Si-layer. At temperatures below 10 K two different transport regimes can be distinguished in the current-voltage characteristic. In high magnetic fields a dramatic instability develops in the non-linear current-voltage characteristics. The influence of different layer structures is discussed.
KW - Germanium
KW - Self-assembled quantum dots
KW - Silicon-Germanium
UR - http://www.scopus.com/inward/record.url?scp=0036492985&partnerID=8YFLogxK
U2 - 10.1016/S1386-9477(02)00276-X
DO - 10.1016/S1386-9477(02)00276-X
M3 - Article
AN - SCOPUS:0036492985
VL - 13
SP - 757
EP - 760
JO - Physica E: Low-Dimensional Systems and Nanostructures
JF - Physica E: Low-Dimensional Systems and Nanostructures
SN - 1386-9477
IS - 2-4
ER -