Details
| Original language | English |
|---|---|
| Pages (from-to) | 3132-3134 |
| Number of pages | 3 |
| Journal | Applied physics letters |
| Volume | 68 |
| Issue number | 22 |
| Publication status | Published - 1 Dec 1996 |
| Externally published | Yes |
Abstract
Direct molecular-beam epitaxial growth of GaAs/AlxGa1-xAs heterostructures on bow-tie shaped constrictions, prepatterned on GaAs substrates is used to fabricate in-plane gate transistors. The fabricated devices can be tuned by applying voltages to in-plane gates, which are also realized during the epitaxial growth. In this way, complete in-plane gate transistors are fabricated in a single growth process. Transport measurements of the devices at 1.3 K show conductance quantization or Coulomb blockade depending on the width of the constriction. The Coulomb blockade effect in the narrowest structures is caused by the formation of a self-assembled quantum dot in the center of the constriction.
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Physics and Astronomy (miscellaneous)
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In: Applied physics letters, Vol. 68, No. 22, 01.12.1996, p. 3132-3134.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Transport characterization of in-plane gate devices fabricated by direct epitaxial growth on patterned substrates
AU - Dilger, M.
AU - Haug, R. J.
AU - Eberl, K.
AU - Kurtenbach, A.
AU - Kershaw, Y.
AU - Klitzing, K. V.
PY - 1996/12/1
Y1 - 1996/12/1
N2 - Direct molecular-beam epitaxial growth of GaAs/AlxGa1-xAs heterostructures on bow-tie shaped constrictions, prepatterned on GaAs substrates is used to fabricate in-plane gate transistors. The fabricated devices can be tuned by applying voltages to in-plane gates, which are also realized during the epitaxial growth. In this way, complete in-plane gate transistors are fabricated in a single growth process. Transport measurements of the devices at 1.3 K show conductance quantization or Coulomb blockade depending on the width of the constriction. The Coulomb blockade effect in the narrowest structures is caused by the formation of a self-assembled quantum dot in the center of the constriction.
AB - Direct molecular-beam epitaxial growth of GaAs/AlxGa1-xAs heterostructures on bow-tie shaped constrictions, prepatterned on GaAs substrates is used to fabricate in-plane gate transistors. The fabricated devices can be tuned by applying voltages to in-plane gates, which are also realized during the epitaxial growth. In this way, complete in-plane gate transistors are fabricated in a single growth process. Transport measurements of the devices at 1.3 K show conductance quantization or Coulomb blockade depending on the width of the constriction. The Coulomb blockade effect in the narrowest structures is caused by the formation of a self-assembled quantum dot in the center of the constriction.
UR - http://www.scopus.com/inward/record.url?scp=0000265674&partnerID=8YFLogxK
U2 - 10.1063/1.115801
DO - 10.1063/1.115801
M3 - Article
AN - SCOPUS:0000265674
VL - 68
SP - 3132
EP - 3134
JO - Applied physics letters
JF - Applied physics letters
SN - 0003-6951
IS - 22
ER -