Details
| Original language | English |
|---|---|
| Article number | 401 |
| Journal | SN Applied Sciences |
| Volume | 2 |
| Issue number | 3 |
| Publication status | Published - 13 Feb 2020 |
Abstract
Small silicon samples were brought into contact with magnesium oxide substrate plates and heated under vacuum. At heating temperatures above 1400 K, a transient light emission effect in the Si/MgO interface was observed. The changes in sample brightness are likely caused by a thermal effect. Typically the sample temperature decreases gradually by 40–80 K and is followed by a very fast rise in temperature. The light emission effect may be correlated to the transient formation and decomposition of an inhibiting layer of magnesium silicate and the endothermic formation of gaseous silicon oxide. Tempering a silicon sample on a magnesium oxide plate for several hours produced an etch pit in the substrate material from which the silicon sample split off during the cooling phase. The etch pit was investigated via electron microscopy. EDXS analysis of the finely structured surface of the reaction zone reports a composition of 2/1/5 (Mg/Si/O). A cross-section of the same area reveals a thin layer of reaction products on top of the substrate material.
Keywords
- Light emission, Monitoring of intermediates, Pidgeon process, Reaction interface, Reaction layer, Silicon, Silicothermic process
ASJC Scopus subject areas
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In: SN Applied Sciences, Vol. 2, No. 3, 401, 13.02.2020.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Transient light emission from the silicothermic reduction of magnesium oxide with potential for monitoring intermediate compound formation and decay
AU - Gebensleben, T.
AU - Becker, V.
AU - Becker, J.A.
N1 - Funding Information: We thank the group of Professor Armin Feldhoff for providing access to the scanning electron microscope JEOL-JSM-6700F used to investigate the sample surfaces and the generous and regular support in obtaining high-quality images. We thank the Institut f?r Werkstoffkunde of the Leibniz Universit?t Hannover and Dr.-Ing. Torsten Heidenblut for providing access to the scanning electron microscope Zeiss AURIGA and for the preparation of the sample cross-section.
PY - 2020/2/13
Y1 - 2020/2/13
N2 - Small silicon samples were brought into contact with magnesium oxide substrate plates and heated under vacuum. At heating temperatures above 1400 K, a transient light emission effect in the Si/MgO interface was observed. The changes in sample brightness are likely caused by a thermal effect. Typically the sample temperature decreases gradually by 40–80 K and is followed by a very fast rise in temperature. The light emission effect may be correlated to the transient formation and decomposition of an inhibiting layer of magnesium silicate and the endothermic formation of gaseous silicon oxide. Tempering a silicon sample on a magnesium oxide plate for several hours produced an etch pit in the substrate material from which the silicon sample split off during the cooling phase. The etch pit was investigated via electron microscopy. EDXS analysis of the finely structured surface of the reaction zone reports a composition of 2/1/5 (Mg/Si/O). A cross-section of the same area reveals a thin layer of reaction products on top of the substrate material.
AB - Small silicon samples were brought into contact with magnesium oxide substrate plates and heated under vacuum. At heating temperatures above 1400 K, a transient light emission effect in the Si/MgO interface was observed. The changes in sample brightness are likely caused by a thermal effect. Typically the sample temperature decreases gradually by 40–80 K and is followed by a very fast rise in temperature. The light emission effect may be correlated to the transient formation and decomposition of an inhibiting layer of magnesium silicate and the endothermic formation of gaseous silicon oxide. Tempering a silicon sample on a magnesium oxide plate for several hours produced an etch pit in the substrate material from which the silicon sample split off during the cooling phase. The etch pit was investigated via electron microscopy. EDXS analysis of the finely structured surface of the reaction zone reports a composition of 2/1/5 (Mg/Si/O). A cross-section of the same area reveals a thin layer of reaction products on top of the substrate material.
KW - Light emission
KW - Monitoring of intermediates
KW - Pidgeon process
KW - Reaction interface
KW - Reaction layer
KW - Silicon
KW - Silicothermic process
UR - http://www.scopus.com/inward/record.url?scp=85100755661&partnerID=8YFLogxK
U2 - 10.1007/s42452-020-2126-4
DO - 10.1007/s42452-020-2126-4
M3 - Article
VL - 2
JO - SN Applied Sciences
JF - SN Applied Sciences
IS - 3
M1 - 401
ER -