Details
| Original language | English |
|---|---|
| Title of host publication | 2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019 |
| Subtitle of host publication | Proceedings |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 2200-2206 |
| Number of pages | 7 |
| ISBN (electronic) | 978-1-7281-0494-2 |
| ISBN (print) | 978-1-7281-0495-9 |
| Publication status | Published - Jun 2019 |
| Event | 46th IEEE Photovoltaic Specialists Conference, PVSC 2019 - Chicago, United States Duration: 16 Jun 2019 → 21 Jun 2019 |
Publication series
| Name | Conference Record of the IEEE Photovoltaic Specialists Conference |
|---|---|
| ISSN (Print) | 0160-8371 |
Abstract
We report on the transfer of our lab-type POLO2-IBC process with POLO contacts for both polarities towards an industrial level. Here we demonstrate a shortened cell fabrication process that uses p-type wafers and keeps the Al-back surface field of the PERC process but substitutes the phosphorous diffusion by a n-type poly-Si deposition. The resulting POLO-IBC process is similarly short as the PERC process. A high lifetime with the Cz material and highly selective POLO junctions require a reduce thermal budget and a reduced thickness of the interfacial oxide compared to our previous lab cells that used FZ silicon wafers. Our POLO-IBC cells have an efficiency potential of 24.5 % as deduced from simulations. We measure an efficiency of 21.8 % after finishing the first cell batch. For a cell from our second cell batch with improved passivation we measure an implied pseudo efficiency of 25.2 % before laser contact openings.
Keywords
- loss analysis, photovoltaic cells, POLO passivating contacts, screen printing
ASJC Scopus subject areas
- Engineering(all)
- Control and Systems Engineering
- Engineering(all)
- Industrial and Manufacturing Engineering
- Engineering(all)
- Electrical and Electronic Engineering
Sustainable Development Goals
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2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019: Proceedings. Institute of Electrical and Electronics Engineers Inc., 2019. p. 2200-2206 8980960 (Conference Record of the IEEE Photovoltaic Specialists Conference).
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
}
TY - GEN
T1 - Transferring the Record p-type Si POLO-IBC Cell Technology Towards an Industrial Level
AU - Haase, Felix
AU - Hollemann, Christina
AU - Schafer, Soren
AU - Krügener, Jan
AU - Brendel, Rolf
AU - Peibst, Robby
N1 - Funding information: The authors thank the Federal Ministry of Economic Affairs and Energy (BMWi) under grant number 0324275A (Street) and the State of Lower Saxony for funding this work, Anja Christ, Miriam Berger, Hilke Fischer, Annika Raugewitz, Ulrike Baumann, Till Brendemühl, Sonja Bräunig and Birgit Beier (all from ISFH), Raymond Zieseniss and Guido Glowatzki (both from Institute of Electronic Materials and Devices) for sample processing, Bettina Wolpensinger (ISFH) for the SEM analysis and Tobias Neubert and David Sylla (both ISFH) for laser processing and drawing the layout for screen printing.
PY - 2019/6
Y1 - 2019/6
N2 - We report on the transfer of our lab-type POLO2-IBC process with POLO contacts for both polarities towards an industrial level. Here we demonstrate a shortened cell fabrication process that uses p-type wafers and keeps the Al-back surface field of the PERC process but substitutes the phosphorous diffusion by a n-type poly-Si deposition. The resulting POLO-IBC process is similarly short as the PERC process. A high lifetime with the Cz material and highly selective POLO junctions require a reduce thermal budget and a reduced thickness of the interfacial oxide compared to our previous lab cells that used FZ silicon wafers. Our POLO-IBC cells have an efficiency potential of 24.5 % as deduced from simulations. We measure an efficiency of 21.8 % after finishing the first cell batch. For a cell from our second cell batch with improved passivation we measure an implied pseudo efficiency of 25.2 % before laser contact openings.
AB - We report on the transfer of our lab-type POLO2-IBC process with POLO contacts for both polarities towards an industrial level. Here we demonstrate a shortened cell fabrication process that uses p-type wafers and keeps the Al-back surface field of the PERC process but substitutes the phosphorous diffusion by a n-type poly-Si deposition. The resulting POLO-IBC process is similarly short as the PERC process. A high lifetime with the Cz material and highly selective POLO junctions require a reduce thermal budget and a reduced thickness of the interfacial oxide compared to our previous lab cells that used FZ silicon wafers. Our POLO-IBC cells have an efficiency potential of 24.5 % as deduced from simulations. We measure an efficiency of 21.8 % after finishing the first cell batch. For a cell from our second cell batch with improved passivation we measure an implied pseudo efficiency of 25.2 % before laser contact openings.
KW - loss analysis
KW - photovoltaic cells
KW - POLO passivating contacts
KW - screen printing
UR - http://www.scopus.com/inward/record.url?scp=85081550270&partnerID=8YFLogxK
U2 - 10.1109/pvsc40753.2019.8980960
DO - 10.1109/pvsc40753.2019.8980960
M3 - Conference contribution
AN - SCOPUS:85081550270
SN - 978-1-7281-0495-9
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
SP - 2200
EP - 2206
BT - 2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 46th IEEE Photovoltaic Specialists Conference, PVSC 2019
Y2 - 16 June 2019 through 21 June 2019
ER -