Details
| Original language | English |
|---|---|
| Pages (from-to) | 1765-1772 |
| Number of pages | 8 |
| Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| Volume | 21 |
| Issue number | 4 |
| Publication status | Published - 5 Aug 2003 |
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Electrical and Electronic Engineering
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In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 21, No. 4, 05.08.2003, p. 1765-1772.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Towards understanding epitaxial growth of alternative high-K dielectrics on Si(001)
T2 - Application to praseodymium oxide
AU - Fissel, A.
AU - Osten, H. J.
AU - Bugiel, E.
N1 - ACKNOWLEDGMENTS: Part of this work has been realized during our stay at IHP in Frankfurt~Oder!, Germany. The authors would like to thank various members of IHP for their contributions as well as for stimulating discussions. This work was partly supported by the German Federal Ministry of Education and Research in the framework of the central project KrisMOS (Grant No. 01M3142D).
PY - 2003/8/5
Y1 - 2003/8/5
UR - http://www.scopus.com/inward/record.url?scp=0141719634&partnerID=8YFLogxK
U2 - 10.1116/1.1589516
DO - 10.1116/1.1589516
M3 - Article
AN - SCOPUS:0141719634
VL - 21
SP - 1765
EP - 1772
JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
SN - 1071-1023
IS - 4
ER -