Details
| Original language | English |
|---|---|
| Pages (from-to) | 144-149 |
| Number of pages | 6 |
| Journal | Journal of crystal growth |
| Volume | 323 |
| Issue number | 1 |
| Publication status | Published - 15 May 2011 |
Abstract
Creating rotation twins periodically in a defined distance within Si layers could lead to the formation of miscellaneous Si crystal structures. This could be realized by several growth and annealing cycles on heavily B-covered Si(1 1 1) exhibiting (√3×√3)R30°surface superstructure. However, surface defects due to imperfections of the B-induced surface structure give rise to an inhomogeneous Si nucleation, which limits the structure size. Therefore, surface structure formation induced by both adsorption and surface segregation of B on Si(1 1 1) and its influence on the Si molecular beam epitaxial growth mode has been investigated using ultraviolet photoelectron spectroscopy and accompanying reflection high-energy electron diffraction. Based on these studies, conditions have been established to prevent surface defects. Furthermore, annealing samples with 0.6 monolayers (ML) B buried below several ML Si at 1080 K results in a renewal of the B-induced Si surface structure without any defects. This indicates a dominance of B surface segregation over bulk diffusion, which becomes significant only above 1100 K.
Keywords
- Molecular beam epitaxy, Nucleation, Reflection high-energy electron diffraction surface defects, Semiconducting silicon, Surface processes, Ultraviolet photoelectron spectroscopy
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Condensed Matter Physics
- Chemistry(all)
- Inorganic Chemistry
- Materials Science(all)
- Materials Chemistry
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In: Journal of crystal growth, Vol. 323, No. 1, 15.05.2011, p. 144-149.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Towards controlled molecular beam epitaxial growth of artificially stacked Si
T2 - Study of boron adsorption and surface segregation on Si(1 1 1)
AU - Fissel, A.
AU - Krügener, J.
AU - Osten, H. J.
N1 - Funding information: The authors would like to acknowledge the partial support of the work by the Deutsche Forschungsgemeinschaft (DFG Project FI 726/3-2 ).
PY - 2011/5/15
Y1 - 2011/5/15
N2 - Creating rotation twins periodically in a defined distance within Si layers could lead to the formation of miscellaneous Si crystal structures. This could be realized by several growth and annealing cycles on heavily B-covered Si(1 1 1) exhibiting (√3×√3)R30°surface superstructure. However, surface defects due to imperfections of the B-induced surface structure give rise to an inhomogeneous Si nucleation, which limits the structure size. Therefore, surface structure formation induced by both adsorption and surface segregation of B on Si(1 1 1) and its influence on the Si molecular beam epitaxial growth mode has been investigated using ultraviolet photoelectron spectroscopy and accompanying reflection high-energy electron diffraction. Based on these studies, conditions have been established to prevent surface defects. Furthermore, annealing samples with 0.6 monolayers (ML) B buried below several ML Si at 1080 K results in a renewal of the B-induced Si surface structure without any defects. This indicates a dominance of B surface segregation over bulk diffusion, which becomes significant only above 1100 K.
AB - Creating rotation twins periodically in a defined distance within Si layers could lead to the formation of miscellaneous Si crystal structures. This could be realized by several growth and annealing cycles on heavily B-covered Si(1 1 1) exhibiting (√3×√3)R30°surface superstructure. However, surface defects due to imperfections of the B-induced surface structure give rise to an inhomogeneous Si nucleation, which limits the structure size. Therefore, surface structure formation induced by both adsorption and surface segregation of B on Si(1 1 1) and its influence on the Si molecular beam epitaxial growth mode has been investigated using ultraviolet photoelectron spectroscopy and accompanying reflection high-energy electron diffraction. Based on these studies, conditions have been established to prevent surface defects. Furthermore, annealing samples with 0.6 monolayers (ML) B buried below several ML Si at 1080 K results in a renewal of the B-induced Si surface structure without any defects. This indicates a dominance of B surface segregation over bulk diffusion, which becomes significant only above 1100 K.
KW - Molecular beam epitaxy
KW - Nucleation
KW - Reflection high-energy electron diffraction surface defects
KW - Semiconducting silicon
KW - Surface processes
KW - Ultraviolet photoelectron spectroscopy
UR - http://www.scopus.com/inward/record.url?scp=79957988851&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2010.12.001
DO - 10.1016/j.jcrysgro.2010.12.001
M3 - Article
AN - SCOPUS:79957988851
VL - 323
SP - 144
EP - 149
JO - Journal of crystal growth
JF - Journal of crystal growth
SN - 0022-0248
IS - 1
ER -