Details
| Original language | English |
|---|---|
| Article number | 146402 |
| Journal | Physical Review Letters |
| Volume | 103 |
| Issue number | 14 |
| Publication status | Published - 30 Sept 2009 |
Abstract
We theoretically predict a strong influence of stimulated exciton-exciton scattering on semiconductor luminescence. The stimulated scattering causes circularly polarized instead of unpolarized emission at the biexciton emission line in a degenerate gas of partly spin polarized excitons. The biexciton polarization effect increases with increasing exciton densities and decreasing temperatures and approaches almost unity in the ultimate case of Bose-Einstein condensation. Time- and polarization-resolved luminescence measurements evidence the biexciton polarization effect both in ZnSe and GaAs quantum wells.
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In: Physical Review Letters, Vol. 103, No. 14, 146402, 30.09.2009.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Towards bose-einstein condensation of semiconductor excitons
T2 - The biexciton polarization effect
AU - Hägele, D.
AU - Pfalz, Stefan
AU - Oestreich, Michael
PY - 2009/9/30
Y1 - 2009/9/30
N2 - We theoretically predict a strong influence of stimulated exciton-exciton scattering on semiconductor luminescence. The stimulated scattering causes circularly polarized instead of unpolarized emission at the biexciton emission line in a degenerate gas of partly spin polarized excitons. The biexciton polarization effect increases with increasing exciton densities and decreasing temperatures and approaches almost unity in the ultimate case of Bose-Einstein condensation. Time- and polarization-resolved luminescence measurements evidence the biexciton polarization effect both in ZnSe and GaAs quantum wells.
AB - We theoretically predict a strong influence of stimulated exciton-exciton scattering on semiconductor luminescence. The stimulated scattering causes circularly polarized instead of unpolarized emission at the biexciton emission line in a degenerate gas of partly spin polarized excitons. The biexciton polarization effect increases with increasing exciton densities and decreasing temperatures and approaches almost unity in the ultimate case of Bose-Einstein condensation. Time- and polarization-resolved luminescence measurements evidence the biexciton polarization effect both in ZnSe and GaAs quantum wells.
UR - http://www.scopus.com/inward/record.url?scp=70349972386&partnerID=8YFLogxK
U2 - 10.1103/PhysRevLett.103.146402
DO - 10.1103/PhysRevLett.103.146402
M3 - Article
AN - SCOPUS:70349972386
VL - 103
JO - Physical Review Letters
JF - Physical Review Letters
SN - 0031-9007
IS - 14
M1 - 146402
ER -