Details
| Original language | English |
|---|---|
| Pages (from-to) | 630-638 |
| Number of pages | 9 |
| Journal | Progress in Photovoltaics: Research and Applications |
| Volume | 20 |
| Issue number | 6 |
| Publication status | Published - Sept 2012 |
Abstract
We have implemented a baseline solar cell process based on today's standard industrially manufactured silicon solar cells. Using this process, we achieve conversion efficiencies up to 18.5% applying 125 × 125 mm pseudo-square p-type 2-3 Ω cm boron-doped Czochralski silicon wafers featuring screen-printed front and rear contacts and a homogenously doped 70 Ω/n+-emitter. Optimizing a print-on-print process for the silver front side metallization, we reduce the finger width from 110 to 70 μm, which increases the conversion efficiency up to 18.9% due to the reduced shadowing loss. In order to further increase the efficiency, we implement two different dielectric rear surface passivation stacks: (i) a silicon dioxide/silicon nitride stack and (ii) an aluminium oxide/silicon nitride stack. The rear contacts to the silicon base are formed by local laser ablation of the passivation stack and aluminium screen printing. The dielectric layer stacks at the rear decrease the surface recombination velocity from Seff,rear = 350 cm/s for a full-area Al back surface field down to Seff,rear = 70 cm/s and increase the internal reflectance from 61% up to 91%. The improved solar cell rear increases the conversion efficiency η up to an independently confirmed value of 19.4%, the short-circuit current density J sc up to 38.9 mA/cm and the open-circuit voltage Voc up to 662 mV. The detailed solar cell analysis reveals potential to further increase the conversion efficiency towards 20% in the near future.
Keywords
- aluminium oxide, local Al contacts, PERC, print on print, screen printing, silicon dioxide, silicon solar cells, surface passivation
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Energy(all)
- Renewable Energy, Sustainability and the Environment
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Electrical and Electronic Engineering
Sustainable Development Goals
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In: Progress in Photovoltaics: Research and Applications, Vol. 20, No. 6, 09.2012, p. 630-638.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Towards 20% efficient large-area screen-printed rear-passivated silicon solar cells
AU - Dullweber, Thorsten
AU - Gatz, Sebastian
AU - Hannebauer, Helge
AU - Falcon, Tom
AU - Hesse, Rene
AU - Schmidt, Jan
AU - Brendel, Rolf
PY - 2012/9
Y1 - 2012/9
N2 - We have implemented a baseline solar cell process based on today's standard industrially manufactured silicon solar cells. Using this process, we achieve conversion efficiencies up to 18.5% applying 125 × 125 mm pseudo-square p-type 2-3 Ω cm boron-doped Czochralski silicon wafers featuring screen-printed front and rear contacts and a homogenously doped 70 Ω/n+-emitter. Optimizing a print-on-print process for the silver front side metallization, we reduce the finger width from 110 to 70 μm, which increases the conversion efficiency up to 18.9% due to the reduced shadowing loss. In order to further increase the efficiency, we implement two different dielectric rear surface passivation stacks: (i) a silicon dioxide/silicon nitride stack and (ii) an aluminium oxide/silicon nitride stack. The rear contacts to the silicon base are formed by local laser ablation of the passivation stack and aluminium screen printing. The dielectric layer stacks at the rear decrease the surface recombination velocity from Seff,rear = 350 cm/s for a full-area Al back surface field down to Seff,rear = 70 cm/s and increase the internal reflectance from 61% up to 91%. The improved solar cell rear increases the conversion efficiency η up to an independently confirmed value of 19.4%, the short-circuit current density J sc up to 38.9 mA/cm and the open-circuit voltage Voc up to 662 mV. The detailed solar cell analysis reveals potential to further increase the conversion efficiency towards 20% in the near future.
AB - We have implemented a baseline solar cell process based on today's standard industrially manufactured silicon solar cells. Using this process, we achieve conversion efficiencies up to 18.5% applying 125 × 125 mm pseudo-square p-type 2-3 Ω cm boron-doped Czochralski silicon wafers featuring screen-printed front and rear contacts and a homogenously doped 70 Ω/n+-emitter. Optimizing a print-on-print process for the silver front side metallization, we reduce the finger width from 110 to 70 μm, which increases the conversion efficiency up to 18.9% due to the reduced shadowing loss. In order to further increase the efficiency, we implement two different dielectric rear surface passivation stacks: (i) a silicon dioxide/silicon nitride stack and (ii) an aluminium oxide/silicon nitride stack. The rear contacts to the silicon base are formed by local laser ablation of the passivation stack and aluminium screen printing. The dielectric layer stacks at the rear decrease the surface recombination velocity from Seff,rear = 350 cm/s for a full-area Al back surface field down to Seff,rear = 70 cm/s and increase the internal reflectance from 61% up to 91%. The improved solar cell rear increases the conversion efficiency η up to an independently confirmed value of 19.4%, the short-circuit current density J sc up to 38.9 mA/cm and the open-circuit voltage Voc up to 662 mV. The detailed solar cell analysis reveals potential to further increase the conversion efficiency towards 20% in the near future.
KW - aluminium oxide
KW - local Al contacts
KW - PERC
KW - print on print
KW - screen printing
KW - silicon dioxide
KW - silicon solar cells
KW - surface passivation
UR - http://www.scopus.com/inward/record.url?scp=84865656136&partnerID=8YFLogxK
U2 - 10.1002/pip.1198
DO - 10.1002/pip.1198
M3 - Article
AN - SCOPUS:84865656136
VL - 20
SP - 630
EP - 638
JO - Progress in Photovoltaics: Research and Applications
JF - Progress in Photovoltaics: Research and Applications
SN - 1062-7995
IS - 6
ER -