Details
| Original language | English |
|---|---|
| Title of host publication | 2017 IEEE 60th International Midwest Symposium on Circuits and Systems, MWSCAS 2017 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 691-694 |
| Number of pages | 4 |
| ISBN (electronic) | 9781509063895 |
| ISBN (print) | 9781509063901 |
| Publication status | Published - 2017 |
| Event | 60th IEEE International Midwest Symposium on Circuits and Systems, MWSCAS 2017 - Boston, United States Duration: 6 Aug 2017 → 9 Aug 2017 Conference number: 60 |
Publication series
| Name | Midwest Symposium on Circuits and Systems |
|---|---|
| Publisher | IEEE |
| ISSN (Print) | 1548-3746 |
| ISSN (electronic) | 1558-3899 |
Abstract
The advancing trend to autonomous driving tightens the requirements for automotive microcontrollers with embedded flash memories. High reliability and low latency demands however have prevented the broad usage of multilevel-cell flash in this sector so far. This paper describes a robust time-domain voltage sensing scheme tackling the challenges arising from these tight conditions. A dynamic voltage ramp is applied at the wordlines to operate the memory cells at optimum readout conditions. Thus a linearized transfer characteristic is achieved, which eases the cell state placement and reduces the effect of threshold shifts. A sense amplifier design with improved slope detection implemented in a 28 nm CMOS technology is presented. Simulations at nominal supply voltage 1.1 V Vdd show a 30% increased maximum read window compared to the former design.
Keywords
- Embedded flash, Multi-level flash, Sense amplifier, Time-domain sensing, Voltage sensing
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Engineering(all)
- Electrical and Electronic Engineering
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2017 IEEE 60th International Midwest Symposium on Circuits and Systems, MWSCAS 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 691-694 8053017 (Midwest Symposium on Circuits and Systems).
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
}
TY - GEN
T1 - Time-Domain Ramped Gate Sensing for Embedded Multi-level Flash in Automotive Applications
AU - Kiesel, Sebastian
AU - Kern, Thomas
AU - Wicht, Bernhard
N1 - Conference code: 60
PY - 2017
Y1 - 2017
N2 - The advancing trend to autonomous driving tightens the requirements for automotive microcontrollers with embedded flash memories. High reliability and low latency demands however have prevented the broad usage of multilevel-cell flash in this sector so far. This paper describes a robust time-domain voltage sensing scheme tackling the challenges arising from these tight conditions. A dynamic voltage ramp is applied at the wordlines to operate the memory cells at optimum readout conditions. Thus a linearized transfer characteristic is achieved, which eases the cell state placement and reduces the effect of threshold shifts. A sense amplifier design with improved slope detection implemented in a 28 nm CMOS technology is presented. Simulations at nominal supply voltage 1.1 V Vdd show a 30% increased maximum read window compared to the former design.
AB - The advancing trend to autonomous driving tightens the requirements for automotive microcontrollers with embedded flash memories. High reliability and low latency demands however have prevented the broad usage of multilevel-cell flash in this sector so far. This paper describes a robust time-domain voltage sensing scheme tackling the challenges arising from these tight conditions. A dynamic voltage ramp is applied at the wordlines to operate the memory cells at optimum readout conditions. Thus a linearized transfer characteristic is achieved, which eases the cell state placement and reduces the effect of threshold shifts. A sense amplifier design with improved slope detection implemented in a 28 nm CMOS technology is presented. Simulations at nominal supply voltage 1.1 V Vdd show a 30% increased maximum read window compared to the former design.
KW - Embedded flash
KW - Multi-level flash
KW - Sense amplifier
KW - Time-domain sensing
KW - Voltage sensing
UR - http://www.scopus.com/inward/record.url?scp=85034103701&partnerID=8YFLogxK
U2 - 10.1109/MWSCAS.2017.8053017
DO - 10.1109/MWSCAS.2017.8053017
M3 - Conference contribution
AN - SCOPUS:85034103701
SN - 9781509063901
T3 - Midwest Symposium on Circuits and Systems
SP - 691
EP - 694
BT - 2017 IEEE 60th International Midwest Symposium on Circuits and Systems, MWSCAS 2017
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 60th IEEE International Midwest Symposium on Circuits and Systems, MWSCAS 2017
Y2 - 6 August 2017 through 9 August 2017
ER -