Details
| Original language | English |
|---|---|
| Pages (from-to) | 2951-2958 |
| Number of pages | 8 |
| Journal | Physical Review B |
| Volume | 42 |
| Issue number | 5 |
| Publication status | Published - 1 Jan 1990 |
| Externally published | Yes |
Abstract
The Landau-level splitting in AlxGa1-xAs-GaAs heterojunctions has been studied in tilted magnetic fields by analyzing either the thermally activated conductance or the cyclotron-resonance absorption. For an increasing parallel magnetic field, a decrease of the activation energy is found for even filling factors. At odd filling factors the activation energy increases with the parallel magnetic field, corresponding to an increase of the spin splitting. The angular dependence of the Landau-level splitting obtained from the activated conduction at a filling factor of 1/2=2 is found to be in excellent agreement with the results obtained from cyclotron-resonance experiments. For higher filling factors (1/2=4 and 6) only a qualitative agreement between the two methods is observed. The quantitative discrepancy is attributed to the existence of mobility edges, which result in a reduction of the gap observed in thermally activated transport.
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Condensed Matter Physics
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In: Physical Review B, Vol. 42, No. 5, 01.01.1990, p. 2951-2958.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Tilted-magnetic-field measurements of activation energies and cyclotron resonance for AlxGa1-xAs-GaAs heterojunctions
AU - Koning, J. J.
AU - Haug, R. J.
AU - Sigg, H.
AU - Von Klitzing, K.
AU - Weimann, G.
PY - 1990/1/1
Y1 - 1990/1/1
N2 - The Landau-level splitting in AlxGa1-xAs-GaAs heterojunctions has been studied in tilted magnetic fields by analyzing either the thermally activated conductance or the cyclotron-resonance absorption. For an increasing parallel magnetic field, a decrease of the activation energy is found for even filling factors. At odd filling factors the activation energy increases with the parallel magnetic field, corresponding to an increase of the spin splitting. The angular dependence of the Landau-level splitting obtained from the activated conduction at a filling factor of 1/2=2 is found to be in excellent agreement with the results obtained from cyclotron-resonance experiments. For higher filling factors (1/2=4 and 6) only a qualitative agreement between the two methods is observed. The quantitative discrepancy is attributed to the existence of mobility edges, which result in a reduction of the gap observed in thermally activated transport.
AB - The Landau-level splitting in AlxGa1-xAs-GaAs heterojunctions has been studied in tilted magnetic fields by analyzing either the thermally activated conductance or the cyclotron-resonance absorption. For an increasing parallel magnetic field, a decrease of the activation energy is found for even filling factors. At odd filling factors the activation energy increases with the parallel magnetic field, corresponding to an increase of the spin splitting. The angular dependence of the Landau-level splitting obtained from the activated conduction at a filling factor of 1/2=2 is found to be in excellent agreement with the results obtained from cyclotron-resonance experiments. For higher filling factors (1/2=4 and 6) only a qualitative agreement between the two methods is observed. The quantitative discrepancy is attributed to the existence of mobility edges, which result in a reduction of the gap observed in thermally activated transport.
UR - http://www.scopus.com/inward/record.url?scp=0346458302&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.42.2951
DO - 10.1103/PhysRevB.42.2951
M3 - Article
AN - SCOPUS:0346458302
VL - 42
SP - 2951
EP - 2958
JO - Physical Review B
JF - Physical Review B
SN - 0163-1829
IS - 5
ER -