Details
| Original language | English |
|---|---|
| Pages (from-to) | 542-546 |
| Number of pages | 5 |
| Journal | Surface science |
| Volume | 361-362 |
| Publication status | Published - 20 Jul 1996 |
| Externally published | Yes |
Abstract
Magnetotransport measurements on the 2DEG of a Si/Si1-xGex heterostructure with an electron mobility of 32m2/Vs are presented. The coincidence method in a tilted magnetic field is used to determine the effective g factor. In the filling factor range 16 ≤ v ≤ 28 an almost constant effective g factor of g* = 3.39 is found. For lower filling factors, g* increases. Activation energy experiments at different tilting angles show that the size of the valley splitting depends only on the normal component of the magnetic field. Around filling factor v = 3 in a tilted field, an overshoot occurs in the Hall resistance, which is attributed to level crossings as a consequence of the exchange enhancement effects of spin- and valley-splitting.
Keywords
- Electrical transport, Electrical transport measurements, Hall effect, Heterojunctions, Quantum effects, Semiconductor-semiconductor heterojunctions, Silicon-germanium
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Condensed Matter Physics
- Physics and Astronomy(all)
- Surfaces and Interfaces
- Materials Science(all)
- Surfaces, Coatings and Films
- Materials Science(all)
- Materials Chemistry
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In: Surface science, Vol. 361-362, 20.07.1996, p. 542-546.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Tilted magnetic field studies of spin- and valley-splittings in Si/Si1-xGex heterostructures
AU - Weitz, P.
AU - Haug, R. J.
AU - Von Klitzing, K.
AU - Schäffler, F.
PY - 1996/7/20
Y1 - 1996/7/20
N2 - Magnetotransport measurements on the 2DEG of a Si/Si1-xGex heterostructure with an electron mobility of 32m2/Vs are presented. The coincidence method in a tilted magnetic field is used to determine the effective g factor. In the filling factor range 16 ≤ v ≤ 28 an almost constant effective g factor of g* = 3.39 is found. For lower filling factors, g* increases. Activation energy experiments at different tilting angles show that the size of the valley splitting depends only on the normal component of the magnetic field. Around filling factor v = 3 in a tilted field, an overshoot occurs in the Hall resistance, which is attributed to level crossings as a consequence of the exchange enhancement effects of spin- and valley-splitting.
AB - Magnetotransport measurements on the 2DEG of a Si/Si1-xGex heterostructure with an electron mobility of 32m2/Vs are presented. The coincidence method in a tilted magnetic field is used to determine the effective g factor. In the filling factor range 16 ≤ v ≤ 28 an almost constant effective g factor of g* = 3.39 is found. For lower filling factors, g* increases. Activation energy experiments at different tilting angles show that the size of the valley splitting depends only on the normal component of the magnetic field. Around filling factor v = 3 in a tilted field, an overshoot occurs in the Hall resistance, which is attributed to level crossings as a consequence of the exchange enhancement effects of spin- and valley-splitting.
KW - Electrical transport
KW - Electrical transport measurements
KW - Hall effect
KW - Heterojunctions
KW - Quantum effects
KW - Semiconductor-semiconductor heterojunctions
KW - Silicon-germanium
UR - http://www.scopus.com/inward/record.url?scp=0030194748&partnerID=8YFLogxK
U2 - 10.1016/0039-6028(96)00465-7
DO - 10.1016/0039-6028(96)00465-7
M3 - Article
AN - SCOPUS:0030194748
VL - 361-362
SP - 542
EP - 546
JO - Surface science
JF - Surface science
SN - 0039-6028
ER -